公开(公告)号：US20210257426A1

公开(公告)日：2021-08-19

申请号：US17160562

申请日：2021-01-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Tae Sik KIM ,  Hee Yeon KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Kyeong Woo JANG ,  Sug Woo JUNG

IPC: H01L27/32 ,  H01L29/786

Abstract: A display device includes a first thin film transistor disposed on a substrate. A first insulating interlayer covers lire first thin film transistor. An active pattern is disposed on the first insulating interlayer. The active pattern includes indium-gallium-zinc oxide (IGZO) having a thickness in a range of about 150 Å to about 400 Å. A gate insulation layer covers the active pattern A gate pattern is disposed on the gate insulation layer. A second insulating interlayer covers the gate pattern.

公开(公告)号：US20210175258A1

公开(公告)日：2021-06-10

申请号：US16935063

申请日：2020-07-21

Applicant: Samsung Display Co., Ltd.

Inventor： Ki Hyun KIM ,  Young Gil PARK ,  Jin Suk LEE ,  Jai Sun KYOUNG ,  Sug Woo JUNG

IPC: H01L27/12 ,  H01L51/52

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.