公开(公告)号：US20160079328A1

公开(公告)日：2016-03-17

申请号：US14615210

申请日：2015-02-05

Applicant: Samsung Display Co., Ltd.

Inventor： Shinhyuk Yang ,  Eunhyun Kim ,  Taeyoung Kim ,  Hyehyang Park

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/322 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/7869

Abstract: Provided is a thin film transistor substrate including a substrate; a source electrode and a drain electrode that are disposed on the substrate; an active layer that is formed on the source electrode and the drain electrode; a gate electrode that is formed on and is insulated from the active layer; and a pixel electrode that extends from one of the source electrode and the drain electrode.

Abstract translation: 提供一种包括基板的薄膜晶体管基板; 源电极和漏电极，其设置在所述基板上; 形成在源电极和漏电极上的有源层; 形成在所述有源层上并与所述有源层绝缘的栅电极; 以及从源极电极和漏极电极之一延伸的像素电极。