公开(公告)号：US20230039722A1

公开(公告)日：2023-02-09

申请号：US17694011

申请日：2022-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doyoung CHOI ,  Daewon Ha ,  Kyungho Kim ,  Mingyu Kim ,  Kyuman Hwang

IPC: H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes: a substrate including first and second regions, first and second active patterns in the first and second regions, respectively; first source/drain patterns and a first channel pattern including first semiconductor patterns; second source/drain patterns and a second channel pattern including second semiconductor patterns; first and second gate electrodes on the first and second channel patterns, respectively; and a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer includes a first interface layer between the first channel pattern and the first gate electrode, and a first high-k dielectric layer. The second gate dielectric layer includes a second interface layer and a second high-k dielectric layer between the second channel pattern and the second gate electrode. A thickness of the first high-k dielectric layer is greater than that of the second high-k dielectric layer. A thickness of the first semiconductor pattern is less than that of the second semiconductor pattern