公开(公告)号：US10043803B2

公开(公告)日：2018-08-07

申请号：US15372876

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Gigwan Park ,  Huyong Lee ,  TaekSoo Jeon ,  Sangjin Hyun

IPC: H01L29/06 ,  H01L29/43 ,  H01L29/49 ,  H01L27/092 ,  H01L29/423

Abstract: A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.