公开(公告)号：US20140021512A1

公开(公告)日：2014-01-23

申请号：US14031923

申请日：2013-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hoon LEE ,  Ki-se KIM

IPC: H01L29/778 ,  H01L29/872

CPC classification number: H01L23/373 ,  H01L23/3731 ,  H01L23/3736 ,  H01L23/3738 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/872 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2924/00

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract translation: 基于氮化镓（GaN）的半导体器件及其制造方法。 GaN基半导体器件可以包括布置在散热衬底上的异质结构场效应晶体管（HFET）或肖特基二极管。 HFET器件可以包括具有凹陷区域的GaN基多层; 设置在所述凹部区域中的栅极; 以及布置在栅极（或凹部区域）的两个相对侧的GaN基多层的部分上的源极和漏极。 栅极，源极和漏极可以附接到散热基板。 凹部区域可以具有双凹槽结构。 虽然正在制造这种GaN基半导体器件，但是可以使用晶片接合工艺和激光剥离工艺。