公开(公告)号：US20190304770A1

公开(公告)日：2019-10-03

申请号：US16155976

申请日：2018-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-Hee PARK ,  Yangsun PARK ,  Jaesoon LIM ,  Younjoung CHO

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  C23C16/455 ,  C23C16/08 ,  C23C16/20

Abstract: A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.