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    Memory device and method of reading data
    15.
    发明授权
    Memory device and method of reading data 有权

    公开(公告)号：US11380404B2

    公开(公告)日：2022-07-05

    申请号：US17099678

    申请日：2020-11-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Su Chang Jeon ,  Seung Bum Kim ,  Ji Young Lee

    IPC: G11C16/24 ,  G11C16/12 ,  G11C16/26

    Abstract: A non-volatile memory includes a memory cell region including an outer region proximate a first end of the memory cell region and an inner region separated from the first end by the outer region, first and second bit lines, an outer memory cell string including memory cells connected to an outer pillar extending vertically upward through the outer region, and an inner memory cell string including memory cells connected to an inner pillar extending vertically upward through the inner region, and a data input/output (I/O). The data I/O circuit includes a page buffer circuit that connects the first bit line during a first read operation directed to memory cells of the outer memory cell string, and connects the second bit line during a second read operation directed to memory cells of the inner memory cell string, and a read voltage determination unit that selects a first optimal read voltage used during the first read operation, and a second optimal read voltage used during the second read operation.

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