公开(公告)号：US20130277748A1

公开(公告)日：2013-10-24

申请号：US13684655

申请日：2012-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： June-Hee LEE ,  Jae-yeol Song ,  Hye-Ian Lee ,  Hong-bae Park ,  Sang-jin Hyun

IPC: H01L29/78

CPC classification number: H01L29/785 ,  H01L27/0886

Abstract: A semiconductor device includes a fin-type active region; a gate dielectric layer covering an upper surface and opposite lateral surfaces of the fin-type active region; and a gate line extending on the gate dielectric layer to cover the upper surface and opposite lateral surfaces of the fin-type active region and to cross the fin-type active region. The gate line includes an aluminum (Al) doped metal-containing layer extending to cover the upper surface and opposite lateral surfaces of the fin-type active region to a uniform thickness, and a gap-fill metal layer extending on the Al doped metal-containing layer over the fin-type active region. Related fabrication methods are also described.

Abstract translation: 半导体器件包括鳍型有源区; 覆盖所述鳍状有源区的上表面和相对的侧表面的栅介电层; 以及在所述栅极电介质层上延伸以覆盖所述鳍状有源区的上表面和相对的侧表面并跨越所述鳍型有源区的栅极线。 栅极线包括铝（Al）掺杂的含金属层，其延伸以覆盖翅片型有源区的上表面和相对的侧表面至均匀的厚度;以及间隙填充金属层，其在Al掺杂的金属 - 在翅片型有源区域上方。 还描述了相关的制造方法。