公开(公告)号：US20220271091A1

公开(公告)日：2022-08-25

申请号：US17540298

申请日：2021-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Song Yi KIM ,  Junghyun CHO

IPC: H01L27/24

Abstract: A variable resistance memory device includes a memory cell structure on a substrate, the memory cell structure including conductive layers, each of the conductive layers including conductive lines spaced apart from each other in a direction parallel to a top surface of the substrate, and memory cell arrays alternatingly stacked with the conductive layers in a first direction perpendicular to a top surface of the substrate, a first peripheral circuit layer between the substrate and the memory cell structure, the first peripheral circuit layer including first transistors, and a second peripheral circuit layer between the first peripheral circuit layer and the memory cell structure, the second peripheral circuit layer including second transistors, and the second transistors including core transistors that are connected to corresponding ones of the conductive lines.

公开(公告)号：US20210351011A1

公开(公告)日：2021-11-11

申请号：US17099156

申请日：2020-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon JEONG ,  Daebeom LEE ,  Juho LEE ,  Junghyun CHO

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.