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公开(公告)号：US10790356B2
公开(公告)日：2020-09-29
申请号：US16152576
申请日：2018-10-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Haeryong Kim , Hyeonjin Shin , Seunggeol Nam , Seongjun Park
IPC: H01L29/08 , H01L29/417 , H01L29/04 , H01L29/06 , H01L29/267 , H01L29/78 , H01L21/285 , H01L29/45 , H01L29/16 , H01L29/165
Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
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12.发明授权
公开(公告)号：US10217513B2
公开(公告)日：2019-02-26
申请号：US15448998
申请日：2017-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Seunggeol Nam , Changhyun Kim , Hyeonjin Shin , Yeonchoo Cho , Jinseong Heo , Seongjun Park
Abstract: A phase change memory device may include a phase change layer that includes a two-dimensional (2D) material. The phase change layer may include a layered structure that includes one or more layers of 2D material. The phase change layer may be provided between a first electrode and a second electrode, and the phase of at least a portion of one or more of the layers of 2D material may be changed based on an electrical signal applied to the phase change layer through the first electrode and the second electrode. The 2D material may include a chalcogenide-based material or phosphorene. The 2D material may be associated with a phase change temperature that is greater than or equal to about 200° C. and lower than or equal to about 500° C.
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公开(公告)号：US10199469B2
公开(公告)日：2019-02-05
申请号：US15439031
申请日：2017-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seunggeol Nam , Hyeonjin Shin , Yeonchoo Cho , Minhyun Lee , Changhyun Kim , Seongjun Park
IPC: H01L29/66 , H01L29/40 , H01L29/78 , H01L21/283 , H01L29/417 , H01L29/45 , H01L29/786
Abstract: A semiconductor device includes a silicon semiconductor layer including at least one region doped with a first conductive type dopant, a metal material layer electrically connected to the doped region, and a self-assembled monolayer (SAM) between the doped region and the metal material layer, the SAM forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing a Schottky barrier height (SBH).
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公开(公告)号：US10090386B2
公开(公告)日：2018-10-02
申请号：US14533802
申请日：2014-11-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Hyeonjin Shin , Minhyun Lee , Changseok Lee
IPC: H01L29/15 , H01L31/0256 , H01L29/16 , H01L29/78 , H01L29/45 , H01L29/778 , H01L29/10 , H01L29/165 , H01L21/285 , H01L23/485 , H01L29/417
Abstract: Provided are a graphene-metal bonding structure, a method of manufacturing the graphene-metal bonding structure, and a semiconductor device including the graphene-metal bonding structure. According to example embodiments, a graphene-metal bonding structure includes: a graphene layer; a metal layer on the graphene layer; and an intermediate material layer between the graphene layer and the metal layer. The intermediate material layer forms an edge-contact with the metal layer from boundary portions of a material contained in the intermediate material layer that contact the metal layer.
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公开(公告)号：US12147888B2
公开(公告)日：2024-11-19
申请号：US17500429
申请日：2021-10-13
Inventor： Changhyun Kim , Houk Jang , Henry Julian Hinton , Hyeonjin Shin , Minhyun Lee , Donhee Ham
IPC: G06N3/045 , G06F18/214 , G06T7/11
Abstract: Disclosed is a neural computer including an image sensor capable of controlling a photocurrent. The neural computer according to an embodiment includes a preprocessor configured to receive an image and generate a feature map for the received image; a flattening unit configured to transform the feature map generated by the preprocessor into tabular data to provide data output; and an image classifier configured to classify images received through the preprocessor by using the data output by the flattening unit as an input value. The preprocessor includes an optical signal processor configured to receive the image and generate the feature map.
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公开(公告)号：US12080649B2
公开(公告)日：2024-09-03
申请号：US17893349
申请日：2022-08-23
Applicant: Samsung Electronics Co., Ltd. , UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventor： Hyeonjin Shin , Minhyun Lee , Changseok Lee , Kyung-Eun Byun , Hyeonsuk Shin , Seokmo Hong
IPC: H01L23/532 , H01L23/522 , H10B12/00
CPC classification number: H01L23/5329 , H01L23/5226 , H10B12/30
Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.
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公开(公告)号：US12040360B2
公开(公告)日：2024-07-16
申请号：US17735475
申请日：2022-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Haeryong Kim , Hyeonjin Shin , Seunggeol Nam , Seongjun Park
IPC: H01L29/08 , H01L21/285 , H01L29/04 , H01L29/06 , H01L29/267 , H01L29/417 , H01L29/45 , H01L29/78 , H01L29/16 , H01L29/165
CPC classification number: H01L29/0847 , H01L21/28512 , H01L29/04 , H01L29/0665 , H01L29/0669 , H01L29/267 , H01L29/41725 , H01L29/45 , H01L29/78 , H01L29/1606 , H01L29/165
Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
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公开(公告)号：US11830952B2
公开(公告)日：2023-11-28
申请号：US17014127
申请日：2020-09-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minsu Seol , Hyeonjin Shin , Minseok Yoo , Minhyun Lee
IPC: H01L29/786 , H01L29/41 , H01L29/417 , H01L29/24 , H01L29/66 , H01L29/45 , H01L29/06 , H01L21/02 , H01L21/8234 , H01L29/16
CPC classification number: H01L29/78696 , H01L21/02417 , H01L21/02568 , H01L21/823412 , H01L29/0665 , H01L29/1606 , H01L29/24 , H01L29/413 , H01L29/41733 , H01L29/45 , H01L29/66969
Abstract: Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.
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19.发明授权
公开(公告)号：US11703753B2
公开(公告)日：2023-07-18
申请号：US17223568
申请日：2021-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Hyeonjin Shin , Seongjun Jeong , Seongjun Park
Abstract: A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.
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20.发明授权
公开(公告)号：US11624127B2
公开(公告)日：2023-04-11
申请号：US17082502
申请日：2020-10-28
Applicant: Samsung Electronics Co., Ltd. , UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventor： Changseok Lee , Hyeonsuk Shin , Hyeonjin Shin , Seokmo Hong , Minhyun Lee , Seunggeol Nam , Kyungyeol Ma
Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
