公开(公告)号：US09443892B2

公开(公告)日：2016-09-13

申请号：US14182829

申请日：2014-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： June-mo Koo ,  Sang-Hoon Kim ,  Seung-Hun Shin ,  Jongcheol Shin

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

Abstract: An image sensor includes a substrate having a first surface opposing a second surface and a plurality of pixel regions. A photoelectric converter is included in each of the pixel regions, and a gate electrode is formed on the photoelectric converter. Also, a pixel isolation region isolates adjacent pixel regions. The pixel isolation region includes a first isolation layer coupled to a channel stop region. The channel stop region may include an impurity-doped region.

Abstract translation: 图像传感器包括具有与第二表面相对的第一表面和多个像素区域的基板。 在每个像素区域中包括光电转换器，并且在光电转换器上形成栅电极。 此外，像素隔离区隔离相邻像素区域。 像素隔离区域包括耦合到通道停止区域的第一隔离层。 通道停止区域可以包括杂质掺杂区域。