公开(公告)号：US11043498B1

公开(公告)日：2021-06-22

申请号：US16806667

申请日：2020-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Il Han ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108

Abstract: A semiconductor memory device is provided. The device includes a substrate including a cell region and a peripheral region; a plurality of lower electrodes disposed on the substrate in the cell region; a dielectric layer disposed on the plurality of lower electrodes; a metal containing layer disposed on the dielectric layer; a silicon germanium layer disposed on and electrically connected to the metal containing layer; a conductive pad disposed on and electrically connected to the silicon germanium layer; and an upper electrode contact plug disposed on and electrically connected to the conductive pad; The conductive pad extends from the upper electrode contact plug towards the peripheral region in a first direction, and the silicon germanium layer includes an edge portion that extends past the conductive pad in the first direction.