公开(公告)号：US20200058543A1

公开(公告)日：2020-02-20

申请号：US16420328

申请日：2019-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hoon HAN ,  Seokhwan KIM ,  Joodong KIM ,  Junyong NOH ,  Jaewon SEO

IPC: H01L21/768 ,  H01L23/00

Abstract: A semiconductor device including a semiconductor substrate including a chip region and an edge region around the chip region; a lower dielectric layer and an upper dielectric layer on the semiconductor substrate; a redistribution chip pad that penetrates the upper dielectric layer on the chip region and is connected a chip pad; a process monitoring structure on the edge region; and dummy elements in the edge region and having an upper surface lower than an upper surface of the upper dielectric layer.