公开(公告)号：US10896955B2

公开(公告)日：2021-01-19

申请号：US16401347

申请日：2019-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sang Su Kim ,  Woo Seok Park ,  Sung Gi Hur

IPC: H01L27/01 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786 ,  H01L21/762 ,  H01L29/66 ,  H01L21/02 ,  H01L27/092 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, an active region disposed on the substrate and extending in a first direction, a device isolation layer adjacent to the active region, a gate structure disposed in the active region, the gate structure extending in a second direction crossing the first direction, and covering a portion of the device isolation layer, a gate separation pattern contacting an end of the gate structure, and an impurity region disposed below the gate separation pattern and on the device isolation layer.

公开(公告)号：US10665723B2

公开(公告)日：2020-05-26

申请号：US16161765

申请日：2018-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min Song ,  Woo Seok Park ,  Geum Jong Bae ,  Dong Il Bae ,  Jung Gil Yang

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02

Abstract: A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.