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11.发明授权Capacitors including amorphous dielectric layers and methods of forming the same 有权包括非晶介质层的电容器及其形成方法公开(公告)号：US09437420B2
公开(公告)日：2016-09-06
申请号：US14688564
申请日：2015-04-16
Applicant: Samsung Electronics Co., Ltd. , NaMLab gGmbH
Inventor： Kyu-Ho Cho , Youn-Soo Kim , Han-Jin Lim , Steve Knebel , Uwe Schroeder
IPC: H01L21/00 , H01L21/02 , H01L27/108 , H01L49/02
CPC classification number: H01L21/02192 , H01L27/10814 , H01L27/10817 , H01L27/10855 , H01L27/10885 , H01L27/10894 , H01L28/40
Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.
Abstract translation: 电容器可以包括在结晶的金属氧化物介电层上的具有第一介电常数和非晶金属氧化物介电层的结晶的金属氧化物电介质层，其中非晶金属氧化物介电层的第二介电常数小于第一电介质 并且大于氧化铝的介电常数。
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12.发明申请CAPACITORS INCLUDING AMORPHOUS DIELECTRIC LAYERS AND METHODS OF FORMING THE SAME 有权包括非晶介质层的电容器及其形成方法公开(公告)号：US20150357399A1
公开(公告)日：2015-12-10
申请号：US14688564
申请日：2015-04-16
Applicant: Samsung Electronics Co., Ltd. , NaMLab gGmbH
Inventor： Kyu-Ho Cho , Youn-Soo Kim , Han-Jin Lim , Steve Knebel , Uwe Schroeder
CPC classification number: H01L21/02192 , H01L27/10814 , H01L27/10817 , H01L27/10855 , H01L27/10885 , H01L27/10894 , H01L28/40
Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.
Abstract translation: 电容器可以包括在结晶的金属氧化物介电层上的具有第一介电常数和非晶金属氧化物介电层的结晶的金属氧化物电介质层，其中非晶金属氧化物介电层的第二介电常数小于第一电介质 并且大于氧化铝的介电常数。
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