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    Nitride semiconductor light emitting device and method of manufacturing the same
    11.
    发明申请
    Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20080099776A1

    公开(公告)日：2008-05-01

    申请号：US11907564

    申请日：2007-10-15

    申请人： Jin Bock Lee ,  Ho Young Song

    发明人： Jin Bock Lee ,  Ho Young Song

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44

    摘要： There are provided a nitride semiconductor light emitting device and a method of manufacturing the same, the device including: a first conductivity type nitride semiconductor layer formed on a substrate; an active layer formed on the first conductivity type nitride semiconductor layer; a second conductivity type nitride semiconductor layer formed on the active layer; a light-transmitting low refractive index layer formed on the second conductivity type nitride semiconductor layer, the light-transmitting low refractive index layer having a plurality of openings through which the second conductivity type nitride semiconductor layer is partially exposed and formed of a material having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer; and a high conductivity ohmic contact layer formed on the light-transmitting low refractive index layer and connected to the second conductivity type nitride semiconductor layer through the openings of the light-transmitting low refractive index layer.

    摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法，该器件包括：形成在衬底上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上的有源层; 形成在有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透光低折射率层，所述透光低折射率层具有多个开口，所述第二导电型氮化物半导体层通过所述多个开口部分地暴露并由具有 折射率低于第二导电型氮化物半导体层的折射率; 以及形成在透光低折射率层上并通过透光低折射率层的开口连接到第二导电型氮化物半导体层的高导电欧姆接触层。

    METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES
    13.
    发明申请
    METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES 审中-公开
    制造具有表面不规则性的基于氮化镓的发光二极管的方法

    公开(公告)号：US20090258454A1

    公开(公告)日：2009-10-15

    申请号：US12490891

    申请日：2009-06-24

    申请人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    发明人： Dae Yeon KIM ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/44

    摘要： An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.”

    摘要翻译： 在衬底上形成n型GaN层，在n型GaN层上形成有源层。 在有源层上形成p型GaN层，并且对p型GaN层和有源层的部分进行台面蚀刻，以暴露n型GaN层的一部分。 在p型GaN层上形成凹凸形成层，在凹凸形成层上形成用于形成表面凹凸图案的感光膜图案。 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则。 在其上形成有表面凹凸的p型GaN层上形成p电极，在暴露的n型GaN层上形成n电极。

    Method of manufacturing gallium nitride based light emitting diode
    14.
    发明申请
    Method of manufacturing gallium nitride based light emitting diode 审中-公开
    制造氮化镓基发光二极管的方法

    公开(公告)号：US20070184568A1

    公开(公告)日：2007-08-09

    申请号：US11646406

    申请日：2006-12-28

    申请人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    发明人： Dae Yeon Kim ,  Sung Min Hwang ,  Jin Bock Lee ,  Sang Ho Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/44

    摘要： Provided a method of manufacturing a GaN-based LED comprising forming an n-type GaN layer on a substrate; forming an active layer on the n-type GaN layer; forming a p-type GaN layer on the active layer; mesa-etching portions of the p-type GaN layer and the active layer so as to expose a portion of the n-type GaN layer; forming an irregularities forming layer on the p-type GaN layer; forming a photosensitive film pattern for forming a surface irregularities pattern on the irregularities forming layer; selectively wet-etching the irregularities forming layer by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities; forming a p-electrode on the p-type GaN layer having the surface irregularities formed thereon; and forming an n-electrode on the exposed n-type GaN layer.

    摘要翻译： 提供一种制造GaN基LED的方法，包括在衬底上形成n型GaN层; 在n型GaN层上形成有源层; 在有源层上形成p型GaN层; 蚀刻p型GaN层和有源层的部分，以暴露n型GaN层的一部分; 在p型GaN层上形成凹凸形成层; 形成用于在所述凹凸形成层上形成表面凹凸图案的感光膜图案; 通过使用感光膜图案作为蚀刻掩模来选择性地湿法蚀刻不规则形成层，从而形成表面不规则; 在其上形成有表面凹凸的p型GaN层上形成p电极; 以及在暴露的n型GaN层上形成n电极。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    17.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120018764A1

    公开(公告)日：2012-01-26

    申请号：US13127847

    申请日：2009-11-16

    申请人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

    发明人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

    IPC分类号： H01L33/62

    CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

    摘要翻译： 本发明涉及一种用于半导体的垂直/水平发光二极管。 本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。 根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。