公开(公告)号：US07369297B2

公开(公告)日：2008-05-06

申请号：US11299140

申请日：2005-12-08

申请人： Brian K. McGinley ,  Jonathan D. Mohn ,  Howard Woo

发明人： Brian K. McGinley ,  Jonathan D. Mohn ,  Howard Woo

IPC分类号： G02B26/00

CPC分类号： G02B26/0841

摘要： Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.

摘要翻译： 氢解裂硅工艺用于光调制镜结构，采用单晶硅作为基底横截面。 现有工艺使用两个关键对准步骤，这些步骤可以有助于更高的致动电压并导致较低的制造产量。 氢裂解过程将制造过程简化为一步：将单晶硅薄膜转移到CMOS衬底，导致最小的对准误差并提供较大的结合面积。