公开(公告)号：US20110027460A1

公开(公告)日：2011-02-03

申请号：US12905793

申请日：2010-10-15

申请人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

发明人： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kazurou Saeki

IPC分类号： B05D5/06

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

摘要： A method for manufacturing a transflective type LCD having a first substrate provided thereon with a plurality of scanning lines and a plurality of signal lines which are substantially perpendicular to each other and a switching element arranged near each of intersections between said scanning lines and said signal lines, includes forming a reflection region having a reflection electrode film and a transmission region having a transparent electrode film in each pixel surrounded by said scanning lines and said signal lines, a liquid crystal being sandwiched at a gap between said first substrate and a second substrate which is arranged opposite to said first substrate, and forming an organic film having irregularities thereon below said reflection electrode film and said transparent electrode film to substantially the same film thickness.

摘要翻译： 一种半透射型LCD的制造方法，其具有设置有多个扫描线的多个第一基板和与其基本垂直的多个信号线，以及布置在所述扫描线与所述信号线之间的各交叉点附近的开关元件 包括形成具有反射电极膜的反射区域和在由所述扫描线和所述信号线包围的每个像素中具有透明电极膜的透射区域，液晶夹在所述第一基板和第二基板之间的间隙处， 与所述第一基板相对设置，并且在所述反射电极膜和所述透明电极膜的下方形成具有基本相同膜厚度的凹凸的有机膜。

公开(公告)号：US07075603B2

公开(公告)日：2006-07-11

申请号：US10282179

申请日：2002-10-29

申请人： Satoshi Ihida ,  Masaki Shinohara ,  Manabu Oyama

发明人： Satoshi Ihida ,  Masaki Shinohara ,  Manabu Oyama

IPC分类号： G02F1/1333 ,  G02F1/1343

CPC分类号： G02F1/1362 ,  G02F1/133553 ,  G02F1/133555

摘要： In a semi-transmission type liquid crystal display and a method for fabricating the same, a reflective electrode such as aluminum layer and a transparent electrode such as ITO film are used to form a pixel electrode that is provided on an organic film having an uneven surface. In order to effectively restrict the battery effect between a reflective electrode and a transparent electrode, a surface of the organic film is put in a plasma-processing and then is washed by a washing liquid. Thereafter, the transparent electrode is formed and then the reflective electrode such as a double layer electrode of the aluminum layer and the molybdenum layer are formed.

摘要翻译： 在半透射型液晶显示器及其制造方法中，使用诸如铝层的反射电极和诸如ITO膜的透明电极来形成设置在具有不平坦表面的有机膜上的像素电极 。 为了有效地限制反射电极和透明电极之间的电池效应，将有机膜的表面进行等离子体处理，然后用洗涤液洗涤。 此后，形成透明电极，然后形成诸如铝层的双层电极和钼层的反射电极。

公开(公告)号：US06972821B2

公开(公告)日：2005-12-06

申请号：US10144630

申请日：2002-05-13

申请人： Kyounei Yasuda ,  Satoshi Ihida

发明人： Kyounei Yasuda ,  Satoshi Ihida

IPC分类号： G02F1/1333 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35 ,  H01L21/336 ,  H01L29/786 ,  G02F1/136

CPC分类号： G02F1/13394

摘要： An active-matrix addressing LCD device that suppresses effectively the off leakage current induced by the charge-up of the spacers placed over the TFTs. The device comprises (a) a first substrate having switching elements; (b) a second substrate coupled with the first substrate in such a way as to form a gap with spacers between the first and second substrates; the spacers being distributed in the gap; (c) a liquid crystal confined in the gap; and (d) protrusions formed in overlapping areas with the switching elements; each of the protrusions being protruded in a direction that narrows the gap. The spacers distributed in the gap are likely to be shifted away from the overlapping areas due to the protrusions.

摘要翻译： 一种有源矩阵寻址LCD器件，其有效地抑制由放置在TFT上的间隔物的电荷引起的关断漏电流。 该装置包括（a）具有开关元件的第一基板; （b）第二基板，以与第一和第二基板之间的间隔物形成间隙的方式与第一基板连接; 间隔物分布在间隙中; （c）限定在间隙中的液晶; 和（d）与开关元件重叠的区域形成的突起; 每个突起沿使间隙变窄的方向突出。 分布在间隙中的间隔物可能由于突起而偏离重叠区域。

公开(公告)号：US06759283B2

公开(公告)日：2004-07-06

申请号：US10145120

申请日：2002-05-15

申请人： Kyounei Yasuda ,  Satoshi Ihida ,  Jukoh Funaki ,  Manabu Oyama ,  Yoshikazu Hatazawa

发明人： Kyounei Yasuda ,  Satoshi Ihida ,  Jukoh Funaki ,  Manabu Oyama ,  Yoshikazu Hatazawa

IPC分类号： H01L2100

CPC分类号： H01L29/78609 ,  H01L27/1214 ,  H01L29/66765

摘要： A method of fabricating a thin film transistor, includes the steps of (a) forming a gate electrode on an electrically insulating substrate, (b) forming a gate insulating film on the electrically insulating substrate, covering the gate electrode therewith, (c) forming a semiconductor layer on the gate insulating film above the gate electrode, (d) forming source and drain electrodes both making electrical contact with the semiconductor layer, (e) patterning the semiconductor layer into a channel, (f) applying first plasma to the semiconductor layer through the use of a first gas, and (g) applying second plasma to the semiconductor layer through the use of a second gas, and (h) forming an electrically insulating film covering the semiconductor layer therewith.

摘要翻译： 一种制造薄膜晶体管的方法包括以下步骤：（a）在电绝缘基板上形成栅电极，（b）在电绝缘基板上形成栅绝缘膜，覆盖栅电极，（c）形成 在栅极电极上的栅极绝缘膜上的半导体层，（d）形成与半导体层电接触的源极和漏极，（e）将半导体层图案化成沟道，（f）将第一等离子体施加到半导体 并且（g）通过使用第二气体将第二等离子体施加到半导体层，以及（h）形成覆盖半导体层的电绝缘膜。