公开(公告)号：US07026099B2

公开(公告)日：2006-04-11

申请号：US10419921

申请日：2003-04-22

申请人： Hirokazu Kato ,  Yasunobu Onishi ,  Eishi Shiobara ,  Daisuke Kawamura ,  Hiroko Nakamura

发明人： Hirokazu Kato ,  Yasunobu Onishi ,  Eishi Shiobara ,  Daisuke Kawamura ,  Hiroko Nakamura

IPC分类号： G03F7/00

CPC分类号： H01L21/0279 ,  G03F7/0035 ,  H01L21/0275 ,  H01L21/0277 ,  H01L21/0278

摘要： A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.

公开(公告)号：US20050214695A1

公开(公告)日：2005-09-29

申请号：US11081579

申请日：2005-03-17

申请人： Hirokazu Kato ,  Yasunobu Onishi ,  Daisuke Kawamura

发明人： Hirokazu Kato ,  Yasunobu Onishi ,  Daisuke Kawamura

IPC分类号： G03F7/40 ,  B05D1/38 ,  G03F7/00 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0275

摘要： A pattern forming method which can suppress pattern collapse of a resist pattern comprises after developing a resist pattern formed from a resist film on a substrate, supplying a rinse agent onto the substrate to replace a developer on the substrate with the rinse agent, supplying an coating film material onto the substrate to replace at least a part of the rinse agent with the coating film material, wherein the coating film material contains a solvent and a solute different from the resist film, volatilizing the solvent in the coating film material to form an coating film covering the resist film on the substrate, removing at least a part of a surface of the coating film to expose at least a part of an upper surface of the resist pattern and form a mask pattern comprising the coating film, and processing the substrate using the mask pattern.

摘要翻译： 可以抑制抗蚀剂图案的图案塌陷的图案形成方法包括在从基板上的抗蚀剂膜形成的抗蚀剂图案显影之后，将冲洗剂供应到基板上以用冲洗剂代替基板上的显影剂， 将薄膜材料涂覆在基材上以用涂膜材料代替至少一部分漂洗剂，其中涂膜材料含有溶剂和不同于抗蚀剂膜的溶质，挥发涂膜材料中的溶剂以形成涂层 膜，覆盖基板上的抗蚀剂膜，去除涂膜的表面的至少一部分以暴露抗蚀剂图案的上表面的至少一部分，并形成包含涂膜的掩模图案，并使用 掩模图案。

公开(公告)号：US20060194449A1

公开(公告)日：2006-08-31

申请号：US11350127

申请日：2006-02-09

申请人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

发明人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

IPC分类号： H01L21/31

CPC分类号： G03F7/38 ,  G03F7/0045 ,  H01L21/0276

摘要： A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.

摘要翻译： 抗蚀剂图形形成方法包括在基板上形成化学放大型抗蚀剂膜，通过照射能量射线在液体中形成潜像，使其与抗蚀剂膜的表面接触，使抗蚀剂膜的温度升高到第一温度 在形成潜像和接触之后，第一温度低于在抗蚀剂膜中发生酸催化反应的反应开始温度，将抗蚀剂膜的温度保持在第一温度预定时间，增加 抗蚀剂膜的温度与第二温度不低于经过规定时间后的反应开始温度，将抗蚀剂膜的温度降低到第二温度至比反应开始温度低的温度，并使抗蚀剂显影 电影降温后。

公开(公告)号：US20050233255A1

公开(公告)日：2005-10-20

申请号：US11138216

申请日：2005-05-27

申请人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

IPC分类号： H01L21/027 ,  G03F7/11 ,  H01L21/308 ,  G03C5/00

CPC分类号： G03F7/11 ,  H01L21/0274 ,  H01L21/3081

摘要： A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

摘要翻译： 一种形成图案的方法，其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元，使掩模材料层多孔，在掩模材料层的表面上形成抗蚀剂层，图案化抗蚀剂膜以形成抗蚀剂图案，干蚀刻掩模材料层，从而将抗蚀剂图案 到掩蔽材料层，从而形成掩模材料图案，并干燥蚀刻加工膜，从而将掩模材料图案转印到工作膜上，从而形成工作膜图案。

公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

公开(公告)号：USRE35821E

公开(公告)日：1998-06-09

申请号：US639973

申请日：1996-04-29

申请人： Hirokazu Niki ,  Rumiko Hayase ,  Naohiko Oyasato ,  Yasunobu Onishi ,  Akitoshi Kumagae ,  Kazuo Sato ,  Masataka Miyamura ,  Yoshihito Kobayashi

发明人： Hirokazu Niki ,  Rumiko Hayase ,  Naohiko Oyasato ,  Yasunobu Onishi ,  Akitoshi Kumagae ,  Kazuo Sato ,  Masataka Miyamura ,  Yoshihito Kobayashi

IPC分类号： G03F7/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/09 ,  G03F7/11 ,  G03F7/0045

摘要： A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.

摘要翻译： 一种辐射敏感层，其包含作为主要成分的含有当暴露于化学辐射时能够产生酸的化合物的辐射敏感性组合物和具有至少一个可被酸分解的键的化合物。 在辐射敏感层上形成酸性涂层。 辐射敏感层和酸性涂层图案暴露于化学辐射。 通过使用碱性水溶液来烘烤和显影辐射敏感层和酸性涂层，以获得每个具有预定宽度的线和间隔的图案。 可以形成矩形截面形状的精细图案，而不会在膜表面上产生由表面抑制层形成的檐。

公开(公告)号：US5091282A

公开(公告)日：1992-02-25

申请号：US504300

申请日：1990-04-03

申请人： Yasunobu Onishi ,  Hirokazu Niki ,  Yoshihito Kobayashi ,  Rumiko Hayase ,  Toru Ushirogouchi

发明人： Yasunobu Onishi ,  Hirokazu Niki ,  Yoshihito Kobayashi ,  Rumiko Hayase ,  Toru Ushirogouchi

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/075

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0755 ,  G03F7/0758 ,  Y10S430/124 ,  Y10S430/125

摘要： This invention includes a photosensitive composition containing an alkali-soluble resin and a compound represented by formula (I), (II) or (III) described in the claims and the specification, a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (IV) described in the claims and the specification and a basic compound, and a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (VI) described in the claims and the specification and a compound which produces an acid upon radiation of light. A pattern formation method using these photosensitive compositions includes the steps of dissolving any one of the above photosensitive compositions in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, and developing the exposed resin layer with an aqueous alkaline solution. When the first or second photosensitive composition is used, a good pattern can also be formed by a method including the steps of dissolving either the first or second photosensitive composition in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, heating the pattern-exposed resin layer, exposing the entire surface of the heated resin layer, and developing the entirely exposed resin layer with an aqueous alkaline solution.

公开(公告)号：US4871646A

公开(公告)日：1989-10-03

申请号：US193688

申请日：1988-05-13

申请人： Shizu Hayase ,  Rumiko Horiguchi ,  Yasunobu Onishi ,  Toru Ushirogouchi

发明人： Shizu Hayase ,  Rumiko Horiguchi ,  Yasunobu Onishi ,  Toru Ushirogouchi

IPC分类号： G03C1/72 ,  C08G77/00 ,  C08G77/02 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03C1/00 ,  G03C1/675 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30

CPC分类号： C08G77/60 ,  C08L83/16 ,  G03F7/0754

摘要： Disclosed are a polysilane containing a unit represented by the following formulas I, II, or III, and a photosensitive composition consisting of the polysilane. ##STR1##

摘要翻译： 公开了含有由下式I，II或III表示的单元的聚硅烷和由聚硅烷组成的感光组合物。 III。影像> I II III

公开(公告)号：US4822716A

公开(公告)日：1989-04-18

申请号：US938874

申请日：1986-12-08

申请人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

发明人： Yasunobu Onishi ,  Shuji Hayase ,  Rumiko Horiguchi ,  Akiko Hirao

IPC分类号： C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  C08L83/16 ,  G03F7/075 ,  G03C1/52

CPC分类号： C08L83/16 ,  C08G77/14 ,  C08G77/26 ,  C08G77/48 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/0757

摘要： The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

摘要翻译： 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂，代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质，可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此，本发明的有机硅抗蚀剂材料，特别是第二和第三有机硅抗蚀剂材料是碱显影的，并且还具有优异的耐氧等离子体性。 因此，它们可以用作双层抗蚀剂系统中的顶层膜，使得可以形成非常精细的抗蚀剂图案，并且具有最少数量的加工步骤。

公开(公告)号：US4465752A

公开(公告)日：1984-08-14

申请号：US376101

申请日：1982-05-07

申请人： Masami Sugiuchi ,  Masataka Miyamura ,  Yasunobu Onishi

发明人： Masami Sugiuchi ,  Masataka Miyamura ,  Yasunobu Onishi

IPC分类号： C08F20/00 ,  C08F20/38 ,  C08F30/00 ,  C08F30/04 ,  C08L1/00 ,  C08L27/00 ,  C08L33/00 ,  C08L33/02 ,  C08L43/00 ,  G03G5/00 ,  G03G5/06 ,  G03G5/07

CPC分类号： G03G5/06 ,  C08F20/38 ,  G03G5/071

摘要： Disclosed are organic photoconductive compositions for use in electrophotography, comprising a polymer containing as main units a naphthalene derivative and/or a naphthacene derivative; and an electron acceptor and/or a sensitizer.

摘要翻译： 公开了用于电子照相术的有机光电导组合物，其包含以萘衍生物和/或并四苯衍生物为主要单元的聚合物; 和电子受体和/或敏化剂。