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19 条记录 (耗时 0.032 秒)

    Phosphor and method for producing same
    15.
    发明授权
    Phosphor and method for producing same 有权
    荧光体及其制造方法

    公开(公告)号：US08580148B2

    公开(公告)日：2013-11-12

    申请号：US10549585

    申请日：2004-03-12

    申请人： Seiko Hirayama ,  Keita Kobayashi ,  Junya Ishii ,  Mizuho Wada ,  Shinji Nakahara

    发明人： Seiko Hirayama ,  Keita Kobayashi ,  Junya Ishii ,  Mizuho Wada ,  Shinji Nakahara

    IPC分类号： C09K11/77

    CPC分类号： C09K11/7734

    摘要： It is an object of the present invention to provide an alkaline earth metal aluminate phosphor having good heat resistance and durability against vacuum ultraviolet rays and ultraviolet rays, among others, and a method of producing the same.An alkaline earth metal aluminate phosphor containing bivalent europium as an activator, which contains at least one element (e) selected from the group consisting of indium, tungsten, niobium, bismuth, molybdenum, tantalum, thallium and lead.

    摘要翻译： 本发明的目的是提供一种对真空紫外线和紫外线具有良好的耐热性和耐久性的碱土金属铝酸盐荧光体及其制造方法。 含有二价铕作为活化剂的碱土金属铝酸盐荧光体，其含有选自铟，钨，铌，铋，钼，钽，铊和铅中的至少一种元素（e）。

    Epitaxial silicon wafer and fabrication method thereof
    16.
    发明授权
    Epitaxial silicon wafer and fabrication method thereof 有权
    外延硅晶片及其制造方法

    公开(公告)号：US08152919B2

    公开(公告)日：2012-04-10

    申请号：US13164511

    申请日：2011-06-20

    申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

    摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

    摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}平面朝向<100>的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

    EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF
    18.
    发明申请
    EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20080057323A1

    公开(公告)日：2008-03-06

    申请号：US11850591

    申请日：2007-09-05

    申请人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    发明人： Takayuki Dohi ,  Shinji Nakahara ,  Masaya Sakurai ,  Masato Sakai

    IPC分类号： B32B9/00 ,  C30B29/10

    CPC分类号： H01L21/02634 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L22/00 ,  H01L29/045 ,  H01L29/32 ,  H01L2924/0002 ,  Y10S117/902 ,  H01L2924/00

    摘要： An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a orientation parallel to the {110} plane toward a direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer.

    摘要翻译： 提供了一种外延硅晶片，其中外延层生长在具有从作为主表面的硅单晶的{110}面倾斜的平面的硅晶片上。 在用于在其上生长外延层的硅晶片中，从平行于{110}面朝向<110>面的<100>取向测量，{110}面的倾斜角方位角在0至45度的范围内， 方向。 通过这样的布置，可以从具有高于{100}晶片的载流子迁移率（包括空穴和电子迁移率）的{110}晶片测量100nm或更小的LPD。 此外，可以抑制{110}晶片中的表面粗糙度劣化。 此外，可以测量{110}晶片的表面状态。 此外，可以对{110}晶片进行质量评估。

    Fine acicular .alpha.-ferric oxide and production thereof
    19.
    发明授权
    Fine acicular .alpha.-ferric oxide and production thereof 失效
    细针状α-氧化铁及其生产

    公开(公告)号：US5569445A

    公开(公告)日：1996-10-29

    申请号：US368203

    申请日：1994-12-29

    申请人： Yoshiki Fukatsu ,  Shinji Nakahara ,  Youichi Yamada ,  Hideji Yamamoto ,  Tatsuya Hida ,  Mizuho Wada

    发明人： Yoshiki Fukatsu ,  Shinji Nakahara ,  Youichi Yamada ,  Hideji Yamamoto ,  Tatsuya Hida ,  Mizuho Wada

    IPC分类号： C01G49/06 ,  G11B5/706 ,  G11B5/708 ,  C01G49/02

    CPC分类号： G11B5/70642 ,  C01G49/06 ,  G11B5/70615 ,  G11B5/708 ,  C01P2002/10 ,  C01P2002/70 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/42

    摘要： Disclosed herein is fine acicular .alpha.-ferric oxide which has the crystallite diameter (D.sub.1014) in the direction perpendicular to the (1014) plane and the crystallite diameter (D.sub.1120) in the direction perpendicular to the (1120) plane such that their ratio D.sub.1014 /D.sub.1120 is in the range of 1-2, and also has a specific surface area of 40-50 m.sup.2 g. Disclosed also herein is fine acicular .alpha.-ferric oxide which has the crystallite diameter (D.sub.1014) in the direction perpendicular to the (1014) plane and the crystallite diameter (D.sub.1120) in the direction perpendicular to the (1120) plane such that their ratio D.sub.1014 /D.sub.1120 is the range of 1-2, and also has an average aspect ratio of 10-15 and a specific surface area of 20-40 m.sup.2 /g. They are produced by wet process including the step of hydrothermal reaction.

    摘要翻译： 本文公开了在垂直于（10 + E，ovs 1 + EE 4）面的方向上具有微晶直径（D10 + E，ov1 + EE4）的细针状α-氧化铁和微晶直径（D11 + E，ovs 2 + EE 0）在垂直于（11 + E，ovs 2 + EE 0）平面的方向上使得它们的比率D10 + E，ov1 + EE4 / D11 + E，ov2 + EE0 在1-2的范围内，还具有40-50m 2 g的比表面积。 此处还公开了在垂直于（10 + E，ovs 1 + EE 4）面和微晶直径（D11）的方向上具有微晶直径（D10 + E，ov1 + EE4）的精细针状α-氧化铁 + E，ovs 2 + EE 0）在垂直于（11 + E，ovs 2 + EE 0）平面的方向上使得它们的比率D10 + E，ov1 + EE4 / D11 + E，ov2 + EE0 为1-2的范围，平均纵横比为10-15，比表面积为20-40m 2 / g。 它们通过湿法制备，包括水热反应步骤。