公开(公告)号：US08021910B2

公开(公告)日：2011-09-20

申请号：US11907902

申请日：2007-10-18

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

摘要翻译： 一种单晶硅太阳能电池的制造方法，包括以下步骤：通过离子注入表面将离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击; 并在单晶硅层中形成p-n结。

公开(公告)号：US07977209B2

公开(公告)日：2011-07-12

申请号：US12161819

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶硅衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

公开(公告)号：US20110111575A1

公开(公告)日：2011-05-12

申请号：US13010103

申请日：2011-01-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

公开(公告)号：US20110111574A1

公开(公告)日：2011-05-12

申请号：US13010122

申请日：2011-01-20

申请人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/46

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

公开(公告)号：US20100289115A1

公开(公告)日：2010-11-18

申请号：US12161694

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L21/26506 ,  H01L21/26533 ,  H01L21/76254 ,  H01L29/78603

摘要： An oxide film having a thickness “tox” of not less than 0.2 μm is provided on the bonding surface of a single-crystal silicon substrate. In a method for manufacturing an SOI substrate according to the present invention, a low-temperature process is employed to suppress the occurrence of thermal strain attributable to a difference in the coefficient of thermal expansion between the silicon substrate and a quartz substrate. To this end, the thickness “tox” of the oxide film is set to a large value of not less than 0.2 μm to provide sufficient mechanical strength to the thin film to be separated and, at the same time, to allow strain to be absorbed in and relaxed by the relatively thick oxide film to suppress the occurrence of transfer defects during the step of separation.

摘要翻译： 在单晶硅基板的接合面上设置厚度“tox”为0.2μm以上的氧化膜。 在根据本发明的SOI衬底的制造方法中，采用低温工艺来抑制由硅衬底和石英衬底之间的热膨胀系数差异引起的热应变的发生。 为此，氧化膜的厚度“tox”被设定为不小于0.2μm的大值，以对要分离的薄膜提供足够的机械强度，并且同时允许应变被吸收 通过相对厚的氧化膜进入和松弛，以抑制分离步骤期间的转印缺陷的发生。

公开(公告)号：US07732867B2

公开(公告)日：2010-06-08

申请号：US11979447

申请日：2007-11-02

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L29/00

CPC分类号： H01L21/76254 ,  C30B29/06 ,  C30B33/00 ,  H01L21/2007 ,  H01L29/78603 ,  Y10S438/967 ,  Y10T428/31612

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 is bonded to the quartz substrate 20 having a carbon concentration of 100 ppm or higher, and an external shock is applied near the ion-implanted damage layer 11 to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that an SOQ substrate can be fabricated. There can be provided an SOQ substrate highly adaptable to a semiconductor device manufacturing process.

摘要翻译： 将氢离子注入到单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11.作为氢离子注入的结果，氢离子注入的边界12为 形成。 将单晶Si衬底10接合到碳浓度为100ppm以上的石英衬底20上，并且在离子注入损伤层11附近施加外部冲击，以沿着氢离子注入边界12剥离Si晶体膜 的单晶Si衬底10。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造出SOQ基板。 可以提供高度适应于半导体器件制造工艺的SOQ衬底。

公开(公告)号：US07696059B2

公开(公告)日：2010-04-13

申请号：US12285409

申请日：2008-10-03

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/28167 ,  H01L21/3144 ,  H01L21/32105 ,  H01L29/4908 ,  H01L29/78603

摘要： A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.

摘要翻译： 实现SOI衬底制造工艺中温度的一致降低。 通过层叠在450℃以下的温度下生长的低温热氧化膜13和基于CVD法得到的氧化膜14，可以获得设置在SOI衬底上的栅极氧化膜。 由于热氧化膜13是100以下的薄膜，所以450℃以下的低温就可以了。 下面的热氧化膜13可以抑制结构缺陷，例如界面状态，并且可以使用形成在热氧化膜上的CVD氧化膜14来调节栅极氧化膜的厚度。 根据这种技术，可以使用常规的一般的氧化硅膜形成装置在低温下形成栅极氧化膜，从而在SOI衬底制造工艺中实现一致的温度降低。

公开(公告)号：US07691724B2

公开(公告)日：2010-04-06

申请号：US12076422

申请日：2008-03-18

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L29/78603

摘要： A method for manufacturing an SOI substrate, including the steps of implanting hydrogen ions from a main surface of a single-crystal silicon substrate having an interstitial oxygen concentration which is equal to or below 1×1018 cm−3; performing an activation treatment with respect to the main surface of at least one of a transparent insulative substrate and the silicon substrate; bonding the main surface of the transparent insulative substrate to the main surface of the silicon substrate at a room temperature; performing a heat treatment with respect to the bonded substrate at a temperature falling within the range of 350° C. to 550° C. and having a cooling rate after the heat treatment that is equal to or below 5° C./minute; and mechanically delaminating a silicon thin film from the silicon substrate to form a silicon film on the main surface of the transparent insulative substrate.

摘要翻译： 一种用于制造SOI衬底的方法，包括以下步骤：从具有等于或低于1×10 18 cm -3的间隙氧浓度的单晶硅衬底的主表面注入氢离子; 对透明绝缘基板和硅基板中的至少一个的主表面进行激活处理; 在室温下将透明绝缘性基板的主面与硅基板的主面接合; 在350℃〜550℃的范围内进行相对于键合基板的热处理，并且具有等于或低于5℃/分钟的热处理后的冷却速度; 并从硅衬底机械分层硅薄膜，以在透明绝缘衬底的主表面上形成硅膜。

公开(公告)号：US20080254595A1

公开(公告)日：2008-10-16

申请号：US12076422

申请日：2008-03-18

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L29/78603

摘要： An SOI substrate having no worry about a fluctuation in electrical characteristics due to generation of oxygen donors is provided.A silicon substrate 10 used for bonding is a single-crystal Si substrate in which an interstitial oxygen concentration measured by infrared absorption spectrophotometry is equal to or below 1×1018 cm−3. The interstitial oxygen concentration of the single-crystal silicon substrate is set to 1×1018 cm−3 or below since a degree of formation of oxygen donors is strongly dependent on the interstitial oxygen concentration. When the interstitial oxygen concentration of the crystal silicon substrate is set to 1×1018 cm−3 or below, a fluctuation in electrical characteristics (a resistivity) of a silicon layer (an SOI layer) of an SOI substrate can be suppressed to a practically problem-free level. Such a single-crystal silicon substrate can be readily obtained by an MCZ method that can control a convection of a silicon melt by applying a magnetic field or an FZ method that uses no quartz crucible.

摘要翻译： 提供了由于氧供体的产生而不担心电特性波动的SOI衬底。 用于结合的硅衬底10是其中通过红外吸收分光光度法测量的间隙氧浓度等于或低于1×10 18 cm -3的单晶Si衬底。 单晶硅衬底的间隙氧浓度设定为1×10 8 -3 -3以下，因为供氧体的形成强度依赖于间隙氧 浓度。 当晶体硅衬底的间隙氧浓度设定为1×10 -3 -3 -3以下时，硅层的电特性（电阻率）的波动（ SOI层）可以被抑制到几乎无问题的水平。 这样的单晶硅衬底可以通过MCZ方法容易地获得，MCZ方法可以通过施加磁场或不使用石英坩埚的FZ方法来控制硅熔体的对流。

公开(公告)号：US20080153272A1

公开(公告)日：2008-06-26

申请号：US11987794

申请日：2007-12-04

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/425 ,  H01L21/42

CPC分类号： H01L21/76254

摘要： The present invention enables reducing a temperature in a manufacturing process of an SOI substrate.A hydrogen ion is implanted into a surface of a single-crystal Si substrate 10 via an oxide film 11 to form a uniform ion implantation layer 12 at a predetermined depth near a surface of the single-crystal Si Substrate 10. At this time, ion implantation is carried out under a condition that a temperature of the Si substrate 10 is maintained so as not to exceed 400° C. Subsequently, a heat treatment is performed with respect to the single-crystal Si substrate 10 at a temperature of 400° C. or below. This heat treatment is effected to weaken mechanical strength of an “implantation interface” of the ion implantation layer 12 in advance prior to a delamination step, and the heat treatment temperature is set to 400° C. or below in order to suppress occurrence of “micro cavities” and “air bubble growth”. A plasma treatment or an ozone treatment is carried out to joint surfaces of both substrates, and an external impact shock is given in a state where the substrates are bonded to each other to mechanically delaminate a silicon film 13 from a bulk 14 of the single-crystal silicon, thereby obtaining an SOI film 13 provided on a quartz substrate 20 via the oxide film 11.

摘要翻译： 本发明能够降低SOI衬底的制造工艺中的温度。 通过氧化膜11将氢离子注入单晶Si衬底10的表面，以在单晶Si衬底10的表面附近的预定深度处形成均匀的离子注入层12。 此时，在将Si衬底10的温度保持为不超过400℃的条件下进行离子注入。随后，对于单晶Si衬底10进行热处理 温度在400℃以下。 进行这种热处理以在分层步骤之前预先减弱离子注入层12的“注入界面”的机械强度，并且将热处理温度设定为400℃或更低，以便抑制“ 微腔“和”气泡生长“。 对两个基板的接合表面进行等离子体处理或臭氧处理，并且在基板彼此接合的状态下给出外部冲击冲击，以使硅膜13与单芯片14的本体14机械地分层。 从而获得经由氧化物膜11设置在石英衬底20上的SOI膜13。