公开(公告)号：US20190393122A1

公开(公告)日：2019-12-26

申请号：US16471472

申请日：2017-12-15

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： STEPHAN NEUGEBAUER ,  STEFAN PFEFFERLEIN ,  RONNY WERNER

IPC: H01L23/367

Abstract: A semiconductor module includes a substrate composed of electrically insulating material. A structured metal layer for contact with an electrical component is applied to a top side of the substrate. The structured metal layer is applied to the substrate only in a central region of the substrate, so that an edge region which surrounds the central region and in which the structured metal layer is not applied to the substrate remains on the top side of the substrate. A contact layer for making contact with a cooling body is situated opposite the structured metal layer and applied to a bottom side of the substrate in the central region. A structured supporting structure is further applied to the bottom side of the substrate in the edge region and has a thickness which corresponds to a thickness of the contact layer.