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17 条记录 (耗时 0.025 秒)

    Salicide process for forming low sheet resistance doped silicon junctions
    11.
    发明授权
    Salicide process for forming low sheet resistance doped silicon junctions 失效
    用于形成低片电阻掺杂硅结的硅化物工艺

    公开(公告)号：US4663191A

    公开(公告)日：1987-05-05

    申请号：US791241

    申请日：1985-10-25

    申请人： Kwangwoo Choi ,  Stanley Roberts

    发明人： Kwangwoo Choi ,  Stanley Roberts

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/52 ,  H01L27/088 ,  H01L29/78 ,  H01L21/24

    CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/32134

    摘要： A process of forming a patterned silicide layer overlying a processed semiconductor substrate, the substrate having insulator regions and insulator-free regions on an exposed surface thereof, comprising the steps of:co-depositing silicon and a refractory metal on the exposed surface of the substrate to form a metal rich silicide thereon;annealing the metal rich silicide such that it reacts with the underlying insulator-free regions to form a reacted silicide without reacting with the underlying insulator regions; andexposing the substrate to a wet etchant which removes the unreacted portions of the metal rich silicide without removing the reacted silicide.

    摘要翻译： 一种在被处理的半导体衬底上形成图案化硅化物层的工艺，该衬底在其暴露表面上具有绝缘体区域和无绝缘体区域，其包括以下步骤：在衬底的暴露表面上共沉积硅和难熔金属 以在其上形成富金属硅化物; 使富金属硅化物退火，使其与下面的无绝缘体区域反应以形成反应的硅化物，而不与下面的绝缘体区域反应; 以及将衬底暴露于湿蚀刻剂，其除去富含金属的硅化物的未反应部分而不除去反应的硅化物。

    Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
    12.
    发明授权
    Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials 失效
    使用含硅稀土六硼化物材料制造扩散到基板中并与其连接的方法

    公开(公告)号：US4481046A

    公开(公告)日：1984-11-06

    申请号：US537124

    申请日：1983-09-29

    申请人： Dennis P. Bouldin ,  Dale P. Hallock ,  Stanley Roberts ,  James G. Ryan

    发明人： Dennis P. Bouldin ,  Dale P. Hallock ,  Stanley Roberts ,  James G. Ryan

    IPC分类号： H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L29/43

    CPC分类号： H01L21/2254 ,  H01L21/28512 ,  H01L21/321 ,  H01L21/76886

    摘要： A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.

    摘要翻译： 一种通过在衬底的表面部分沉积由含有预定量的硅的稀土六硼化物材料制成的导电层，将半导体衬底中的导电性确定杂质扩散并与其接触的方法，并加热衬底 预定时间段在足以使来自六硼化物材料的硼扩散到基板的相邻部分中以改变其导体特性的预定温度下。 同时在导电层和邻接的衬底部分之间建立了良好的电欧姆接触，同时即使在热处理过程中，一些硼的一部分向其扩散到衬底中之后，导电层也保持其导电性。 在含硅六硼化物材料的暴露表面上，通过氧化接近六硼化物材料暴露表面的硅也形成二氧化硅层。

    Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
    16.
    发明授权
    Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials 失效
    使用稀土硼化物材料制造扩散到基板和与其连接的方法

    公开(公告)号：US4490193A

    公开(公告)日：1984-12-25

    申请号：US537128

    申请日：1983-09-29

    申请人： Mousa H. Ishaq ,  Stanley Roberts ,  James G. Ryan

    发明人： Mousa H. Ishaq ,  Stanley Roberts ,  James G. Ryan

    IPC分类号： H01L21/28 ,  H01L21/225 ,  H01L21/285

    CPC分类号： H01L21/2254 ,  H01L21/28512

    摘要： A method for diffusing a conductively determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a layer of a rare earth boride material over a predetermined surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the boride material to diffuse into the adjoining portion of the substrate to modify its conductive characteristics. At the same time a good electrical ohmic contact is established between the boride material and the adjoining substrate portion while the boride material retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment.

    摘要翻译： 一种通过在衬底的预定表面部分上沉积稀土硼化物材料层并将衬底加热预定时间段来扩散半导体衬底中的导电性杂质并使其电接触的方法， 足以使硼从硼化物材料扩散到衬底的相邻部分中以改变其导电特性。 同时在硼化物材料和相邻的基底部分之间建立良好的电欧姆接触，同时硼化物材料即使在热处理过程中其一些硼的一部分向外扩散到衬底中之后也保持其导电性。

    Process for selectively forming refractory metal silicide layers on semiconductor devices
    17.
    发明授权
    Process for selectively forming refractory metal silicide layers on semiconductor devices 失效
    在半导体器件上选择性地形成难熔金属硅化物层的工艺

    公开(公告)号：US4285761A

    公开(公告)日：1981-08-25

    申请号：US164464

    申请日：1980-06-30

    申请人： Joseph J. Fatula, Jr. ,  Stanley Roberts

    发明人： Joseph J. Fatula, Jr. ,  Stanley Roberts

    IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/321 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/24

    CPC分类号： H01L21/28061 ,  H01L21/31116 ,  H01L21/32105 ,  Y10S148/117 ,  Y10S148/14 ,  Y10S148/147 ,  Y10S438/911

    摘要： A method of forming a refractory metal silicide pattern on a substrate by (1) forming a blanket layer of SiO.sub.2 on the substrate, (2) depositing a blanket layer of polycrystalline Si over the SiO.sub.2 layer, (3) defining a pattern in the blanket Si layer thereby exposing selected areas of the SiO.sub.2 layer, (4) depositing a blanket layer of refractory metal silicide on the substrate over the SiO.sub.2 and Si layers, (5) heating the substrate in an oxidizing environment to a temperature sufficient to oxidize the metal silicide layer over the Si to form an upper layer of SiO.sub.2 and to convert the metal silicide layer overlying the SiO.sub.2 layer to a metal rich SiO.sub.2 layer, andexposing the oxidized surface to an etchant that selectively etches away the metal rich SiO.sub.2 layer.

    摘要翻译： （1）在基板上形成SiO 2的覆盖层，（2）在SiO 2层上沉积多晶硅的覆盖层的方法，（3）在覆盖层中限定图案的方法，在基板上形成难熔金属硅化物图案的方法 Si层，从而暴露SiO 2层的选定区域，（4）在SiO 2和Si层上在衬底上沉积难熔金属硅化物的覆盖层，（5）在氧化环境中将衬底加热到​​足以氧化金属的温度 硅化物层以形成SiO 2的上层，并且将覆盖在SiO 2层上的金属硅化物层转化为富金属的SiO 2层，并将氧化的表面暴露于选择性地蚀刻富金属SiO 2层的蚀刻剂。