公开(公告)号：US07203102B2

公开(公告)日：2007-04-10

申请号：US10974019

申请日：2004-10-27

申请人： Martin Brox ,  Russell Houghton ,  Helmut Schneider ,  Sabine Kieser

发明人： Martin Brox ,  Russell Houghton ,  Helmut Schneider ,  Sabine Kieser

IPC分类号： G11C7/10

CPC分类号： G11C11/4076 ,  G11C7/22 ,  G11C11/4096 ,  G11C2207/002

摘要： A semiconductor memory having at least one memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal. The invention also relates to a tri-state driver device for driving the control signal. Further, there is a method for operating a memory, in which the memory has a memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal.

摘要翻译： 一种半导体存储器，具有适于存储数据值的至少一个存储单元，并且适于通过由控制信号控制的开关装置连接到数据线。 本发明还涉及用于驱动控制信号的三态驱动器装置。 此外，存在用于操作存储器的方法，其中存储器具有适于存储数据值的存储单元，并且适于通过由控制信号控制的开关装置连接到数据线。

公开(公告)号：US20060087896A1

公开(公告)日：2006-04-27

申请号：US10974019

申请日：2004-10-27

申请人： Martin Brox ,  Russell Houghton ,  Helmut Schneider ,  Sabine Kieser

发明人： Martin Brox ,  Russell Houghton ,  Helmut Schneider ,  Sabine Kieser

IPC分类号： G11C16/04

CPC分类号： G11C11/4076 ,  G11C7/22 ,  G11C11/4096 ,  G11C2207/002

摘要： The invention relates to semiconductor memories and in particular to DRAMs. A semiconductor memory is provided comprising at least one memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal, further comprising a tri-state driver device for driving the control signal. Further, a method for operating a memory is provided, the memory comprising a memory cell adapted to store a data value, and adapted to be connected to a data line through a switch device controlled by a control signal, the method comprising the steps: driving the control signal at a first voltage level when a read operation is to be performed; and driving the control signal at a second voltage level different from the first voltage level when a write operation is to be performed. Advantageously, the first voltage level used for the read operation is lower than the second voltage level used for the write operation.

摘要翻译： 本发明涉及半导体存储器，特别涉及DRAM。 提供一种半导体存储器，其包括至少一个适于存储数据值的存储单元，并且适于通过由控制信号控制的开关装置连接到数据线，还包括用于驱动控制信号的三态驱动器装置 。 此外，提供了一种用于操作存储器的方法，所述存储器包括适于存储数据值的存储单元，并且适于通过由控制信号控制的开关装置连接到数据线，所述方法包括以下步骤：驱动 当要执行读取操作时处于第一电压电平的控制信号; 以及当要执行写入操作时，以与所述第一电压电平不同的第二电压电平驱动所述控制信号。 有利地，用于读取操作的第一电压电平低于用于写入操作的第二电压电平。