Preparation of -4-thioalkybrobenzene derivatives
    11.
    发明授权
    Preparation of -4-thioalkybrobenzene derivatives 有权
    4-硫代烷基苯衍生物的制备

    公开(公告)号:US07301034B2

    公开(公告)日:2007-11-27

    申请号:US10332861

    申请日:2001-07-17

    IPC分类号: C07D261/04 C07D261/08

    摘要: A process for preparing 4-thioalkylbromobenzene derivatives of the formula I where: R1 is C1-C6-alkyl, C1-C6-haloalkyl, C1-C6-alkoxy, C1-C6-haloalkoxy, C3-C8-cycloalkyl, halogen, R2 is C1-C6-alkyl, C1-C6-alkoxy, C3-C8-cycloalkyl, C2-C6-alkenyl, cyano or a heterocyclic radical, R3 is C1-C6-alkyl, which comprises reacting a compound of the formula II, in which R1 and R2 are as defined above, with a dialkyl disulfide of the formula III R3—S—S—R3III in the presence of a nitrite and a catalyst in a suitable solvent is described.

    摘要翻译: 制备式I的4-硫代烷基溴苯衍生物的方法,其中:R 1是C 1 -C 6 - 烷基,C 1 -C 6 - C 1 -C 6 - 卤代烷基,C 1 -C 6 - 烷氧基,C 1 -C 6 - C 6 - 卤代烷氧基,C 3 -C 8 - 环烷基,卤素,R 2是C 1 -C 6烷基, C 1 -C 6 - 烷基,C 1 -C 6 - 烷氧基,C 3 - C 8 - 环烷基,C 2 -C 6 - 烯基,氰基或杂环基,R 3是 C 1 -C 6 - C 6 - 烷基,其包括使式II化合物(其中R 1和R 2) / SUP>如上所定义,与式III的二烷基二硫化物<?in-line-formula description =“In-line Formulas”end =“lead”?> R 3 -SSR < 描述了在合适的溶剂中存在亚硝酸盐和催化剂的情况下,在实施例3中描述的“In-line-formula description =”In-Line Formulas“end =”tail“?>

    Method of producing 2-alkyl-3-(4,5-dihydroisoxazole-3-yl)-halobenzenes
    16.
    发明授权
    Method of producing 2-alkyl-3-(4,5-dihydroisoxazole-3-yl)-halobenzenes 有权
    2-烷基-3-(4,5-二氢异恶唑-3-基) - 卤代苯的制备方法

    公开(公告)号:US06548677B1

    公开(公告)日:2003-04-15

    申请号:US09856037

    申请日:2001-05-17

    IPC分类号: C07D26118

    CPC分类号: C07D261/04

    摘要: A novel process for preparing the compounds of the formula I where: n is 0, 1 or 2; R1, R2 are C1-C6-alkyl; R3, R4, R5 are hydrogen or C1-C6-alkyl, or R4 and R5 together form a bond; R6 is Cl, Br, which comprises a synthesis sequence starting from 1,2-dialkylbenzenes of the formula II with subsequent halogenation to give 3,6-dihalo-1,2-dialkylbenzenes, haloalkylation to give benzyl bromides, oxidation to give benzaldehydes, oximation, reaction with alkenes to give isoxazoles, conversion into thioethers and, if appropriate, oxidation to give sulfenyl or sulfonyl derivatives of the formula I.

    摘要翻译: 一种制备式I化合物的新方法,其中n为0,1或2; R 1,R 2为C 1 -C 6 - 烷基; R 3,R 4,R 5为氢或C 1 -C 6烷基,或者R 4和R 5一起形成 R 6是Cl,Br,其包含从式II的1,2-二烷基苯开始的合成序列,随后卤化以得到3,6-二卤代-1,2-二烷基苯,卤代烷基化得到苄基溴,氧化得到 苯甲醛,肟化,与烯烃的反应得到异恶唑,转化成硫醚,如果合适,氧化得到式I的磺酰基或磺酰基衍生物。

    Preparation of 2-alkyl-3-(4,5-dihydroisoxazol-3-yl) halobenzenes
    17.
    发明授权
    Preparation of 2-alkyl-3-(4,5-dihydroisoxazol-3-yl) halobenzenes 有权
    2-烷基-3-(4,5-二氢异恶唑-3-基)卤代苯的制备

    公开(公告)号:US06603017B2

    公开(公告)日:2003-08-05

    申请号:US10141236

    申请日:2002-05-09

    IPC分类号: C07D26118

    CPC分类号: C07D261/04

    摘要: A novel process for preparing the compounds of the formula I where: n is 0, 1 or 2; R1, R2 are C1-C6-alkyl; R3, R4, R5 are hydrogen or C1-C6-alkyl, or R4 and R5 together form a bond; R6 is Cl, Br, which comprises a synthesis sequence starting from 1,2-dialkylbenzenes of the formula II with subsequent halogenation to give 3,6-dihalo-1,2-dialkylbenzenes, haloalkylation to give benzyl bromides, oxidation to give benzaldehydes, oximation, reaction with alkenes to give isoxazoles, conversion into thioethers and, if appropriate, oxidation to give sulfenyl or sulfonyl derivatives of the formula I.

    摘要翻译: 一种制备式I化合物的新方法,其中n为0,1或2; R 1,R 2为C 1 -C 6 - 烷基; R 3,R 4,R 5为氢或C 1 -C 6烷基,或者R 4和R 5一起形成 R 6是Cl,Br,其包含从式II的1,2-二烷基苯开始的合成序列,随后卤化以得到3,6-二卤代-1,2-二烷基苯,卤代烷基化得到苄基溴,氧化得到 苯甲醛,肟化,与烯烃的反应得到异恶唑,转化成硫醚,如果合适,氧化得到式I的磺酰基或磺酰基衍生物。

    Preparation of 2-alkyl-3-(4,5-dihydroisoxazol-3-yl) halobenzenes
    18.
    发明授权
    Preparation of 2-alkyl-3-(4,5-dihydroisoxazol-3-yl) halobenzenes 有权
    2-烷基-3-(4,5-二氢异恶唑-3-基)卤代苯的制备

    公开(公告)号:US06716989B2

    公开(公告)日:2004-04-06

    申请号:US10462903

    申请日:2003-06-18

    IPC分类号: C07D26118

    CPC分类号: C07D261/04

    摘要: A novel process for preparing the compounds of the formula I where: n is 0, 1 or 2; R1, R2 are C1-C6-alkyl; R3, R4, R5 are hydrogen or C1-C6-alkyl, or R4 and R5 together form a bond; R6 is Cl, Br, which comprises a synthesis sequence starting from 1,2-dialkylbenzenes of the formula II with subsequent halogenation to give 3,6-dihalo-1,2-dialkylbenzenes, haloalkylation to give benzyl bromides, oxidation to give benzaldehydes, oximation, reaction with alkenes to give isoxazoles, conversion into thioethers and, if appropriate, oxidation to give sulfenyl or sulfonyl derivatives of the formula I.

    摘要翻译: 一种制备式I化合物的新方法,其中n为0,1或2; R 1,R 2为C 1 -C 6 - 烷基; R 3,R 4,R 5, 或者R 4和R 5一起形成键; R 6是Cl,Br,其包含从式II的1,2-二烷基苯开始的合成序列,随后 卤化得到3,6-二卤代-1,2-二烷基苯,卤代烷基化得到苄基溴,氧化得到苯甲醛,肟化,与烯烃反应得到异恶唑,转化成硫醚,如果合适,氧化得到亚硫酰基或磺酰基衍生物 的式I。

    METHOD FOR PRODUCING STRUCTURED ELECTRICALLY CONDUCTIVE SURFACES
    20.
    发明申请
    METHOD FOR PRODUCING STRUCTURED ELECTRICALLY CONDUCTIVE SURFACES 审中-公开
    生产结构化电导体表面的方法

    公开(公告)号:US20090321123A1

    公开(公告)日:2009-12-31

    申请号:US12375702

    申请日:2007-07-31

    摘要: The invention relates to a method for producing structured, electrically-conductive surfaces (3, 11) on an electrically nonconductive support (1), in which the structured and/or full-area electrically-conductive surfaces (3) of a first plane are applied onto the support (1) in a first step, an insulating layer (9) is applied in a second step at the positions where structured and/or full-area electrically-conductive surfaces (11) of a second plane cross the structured and/or full-area electrically-conductive surfaces (3) of the first plane and no electrical contact is intended to take place between the structured and/or full-area electrically-conductive surfaces of the first plane (3) and of the second plane (11), in a third step the structured and/or full-area electrically-conductive surfaces (11) of the second plane are applied according to the first step, and the second and third steps are optionally repeated.

    摘要翻译: 本发明涉及一种用于在不导电支撑件(1)上制造结构化的导电表面(3,11)的方法,其中第一平面的结构化和/或全区域导电表面(3) 在第一步骤中施加到支撑件(1)上,在第二步骤中,在第二平面的结构化和/或全区域导电表面(11)穿过结构化和/或 /或第一平面的全区域导电表面(3),并且不会在第一平面(3)和第二平面(3)的结构化和/或全区域导电表面之间发生电接触, (11),在第三步骤中,根据第一步骤施加第二平面的结构化和/或全区域导电表面(11),并且可选地重复第二和第三步骤。