-
11.发明申请METHOD FOR FORMING TWO DEVICE WAFERS FROM A SINGLE BASE SUBSTRATE UTILIZING A CONTROLLED SPALLING PROCESS 有权使用控制粉碎工艺从单个基板形成两个器件波形的方法公开(公告)号：US20120322230A1
公开(公告)日：2012-12-20
申请号：US13159877
申请日：2011-06-14
IPC分类号： H01L21/78
CPC分类号： H01L21/7813 , H01L21/304
摘要： The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.
摘要翻译： 本公开提供了从单个基底基板开始形成两个器件晶片的方法。 该方法包括首先提供一种结构，该结构包括具有位于基底板的最上表面和最底表面之上或之内的器件层的基底基板。 基底可以具有双面抛光表面。 包括器件层的结构在基底衬底内位于器件层之间的区域中被剥落。 剥落提供了包括基底部分的一部分和器件层之一的第一器件晶片，以及包括基底衬底的另一部分和器件层另一部分的第二器件晶片。
-
12.发明授权Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same 有权从剥落层去除应力层和使用其形成双面太阳能电池的方法公开(公告)号：US08936961B2
公开(公告)日：2015-01-20
申请号：US13481795
申请日：2012-05-26
申请人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L21/00
CPC分类号： H01L31/0684 , H01L21/02002 , H01L31/1896 , Y02E10/547
摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.
摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。
-
13.发明申请REMOVAL OF STRESSOR LAYER FROM A SPALLED LAYER AND METHOD OF MAKING A BIFACIAL SOLAR CELL USING THE SAME 有权从粉末层去除压力层和使用其制造双极太阳能电池的方法公开(公告)号：US20130316488A1
公开(公告)日：2013-11-28
申请号：US13481795
申请日：2012-05-26
申请人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/02 , H01L21/302 , H01L21/762
CPC分类号： H01L31/0684 , H01L21/02002 , H01L31/1896 , Y02E10/547
摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.
摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。
-
公开(公告)号：US20120322227A1
公开(公告)日：2012-12-20
申请号：US13159893
申请日：2011-06-14
IPC分类号： H01L21/30
CPC分类号： H01L21/304 , H01L31/1896 , Y02E10/50 , Y02P80/30
摘要： A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.
摘要翻译： 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层，以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部，然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后，从基底基板的剥离部的顶部除去应力层。
-
15.发明授权Method for forming two device wafers from a single base substrate utilizing a controlled spalling process 有权使用受控的剥落过程从单个基底基板形成两个器件晶片的方法公开(公告)号：US08841203B2
公开(公告)日：2014-09-23
申请号：US13159877
申请日：2011-06-14
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/7813 , H01L21/304
摘要： The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.
摘要翻译： 本公开提供了从单个基底基板开始形成两个器件晶片的方法。 该方法包括首先提供一种结构，该结构包括具有位于基底板的最上表面和最底表面之上或之内的器件层的基底基板。 基底可以具有双面抛光表面。 包括器件层的结构在基底衬底内位于器件层之间的区域中被剥落。 剥落提供了包括基底部分的一部分和器件层之一的第一器件晶片，以及包括基底衬底的另一部分和器件层另一部分的第二器件晶片。
-
16.发明申请公开(公告)号：US20130312819A1
公开(公告)日：2013-11-28
申请号：US13533229
申请日：2012-06-26
申请人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Keith E. Fogel , Bahman Hekmatshoartabari , Paul A. Lauro , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
CPC分类号： H01L31/0684 , H01L21/02002 , H01L31/1896 , Y02E10/547
摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.
-
公开(公告)号：US20100311250A1
公开(公告)日：2010-12-09
申请号：US12784688
申请日：2010-05-21
IPC分类号： H01L21/30
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.
摘要翻译： 一种制造薄膜直接带隙半导体活性太阳能电池器件的方法，包括提供具有表面的源极衬底，并且在表面上设置应力层，该应力层具有与源极衬底的表面接触并且结合到源极衬底的表面。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 在一个实施例中，应力层包括柔性材料。
-
18.发明申请Method for Imparting a Controlled Amount of Stress in Semiconductor Devices for Fabricating Thin Flexible Circuits 审中-公开在制造薄柔性电路的半导体器件中施加受控量的应力的方法公开(公告)号：US20120217622A1
公开(公告)日：2012-08-30
申请号：US13467537
申请日：2012-05-09
CPC分类号： H01L23/585 , H01L21/304 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： Imparting a controlled amount of stress in an assembly comprising a semiconductor circuit on a substrate comprises depositing a tensile stressed metal film stressor layer onto the surface of the circuit. Establishing a fracture region below electrically active regions of the circuit, adhering a foil handle to the assembly and pulling it away from the assembly induces mechanical fracture in the fracture region below the electrically active regions. The mechanical fracture propagates parallel and laterally to the surface of the substrate and below the circuit to produce a thin flexible circuit on a residual substrate. The circuit is under compressive strain that is changed by modifying the stressor layer or residual substrate. Individualized circuits or a circuit may also be defined above the fracture by dividing the circuit into preselected regions with surrounding trenches before fracture. We harvest the circuit(s) by pulling the foil handle away from the assembly.
摘要翻译： 在包括衬底上的半导体电路的组件中施加受控量的应力包括将拉应力金属膜应力层沉积到电路的表面上。 在电路的电活性区域之下建立断裂区域，将箔手柄粘附到组件并将其从组件拉出，从而在电活性区域下方的断裂区域中引起机械断裂。 机械断裂平行且横向地传播到基板的表面并在电路下面，以在残留的基板上产生薄的柔性电路。 电路处于压应变状态，通过改变应力层或残留衬底而改变。 在断裂之前，也可以将断路中的电路划分成具有周围沟槽的预定区域，将个体化电路或电路定义在断裂之上。 我们通过将铝箔手柄拉离组件来收集电路。
-
公开(公告)号：US08247261B2
公开(公告)日：2012-08-21
申请号：US12784688
申请日：2010-05-21
IPC分类号： H01L21/463
CPC分类号： H01L31/0304 , H01L21/20 , H01L21/76254 , H01L31/03762 , H01L31/0725 , H01L31/074 , H01L31/075 , H01L31/076 , H01L31/184 , H01L31/1892 , H01L31/20 , Y02E10/548
摘要： A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.
摘要翻译： 一种制造薄膜直接带隙半导体活性太阳能电池器件的方法，包括：提供具有表面的源极衬底，并在表面上设置应力层，该应力层具有与源极衬底表面接触并结合的应力层表面积。 将手柄箔与应力层操作地相关联并且向手柄箔施加力将应力层与源衬底分离，并将源衬底的一部分留在应力层表面上，基本上对应于与表面相接触的区域 源底物。 该部分的厚度不如源层厚。 应力层厚度低于导致源底材自发剥落的厚度。 源极衬底可以包括无机单晶或多晶材料，例如Si，Ge，GaAs，SiC，蓝宝石或GaN。 在一个实施例中，应力层包括柔性材料。
-
公开(公告)号：US20100310775A1
公开(公告)日：2010-12-09
申请号：US12713560
申请日：2010-02-26
IPC分类号： B05D3/02
CPC分类号： H01L31/075 , H01L21/02002 , H01L31/0725 , H01L31/074 , H01L31/076 , H01L31/184 , H01L31/1892 , Y02E10/548
摘要： A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.
摘要翻译： 从半导体衬底的锭剥落层的方法包括在半导体衬底的锭上形成金属层，其中金属层中的拉伸应力构造成在晶锭中引起断裂; 并在断裂处从锭中去除层。 用于从半导体衬底的锭剥落层的系统包括形成在半导体衬底的锭上的金属层，其中金属层中的拉伸应力被配置为引起锭中的断裂，并且其中该层被配置 在断裂处从锭中移除。
-
-
-
-
-
-
-
-
-
搜索结果
82 条记录 (耗时 0.028 秒)