公开(公告)号：US09045841B1

公开(公告)日：2015-06-02

申请号：US13359343

申请日：2012-01-26

申请人： Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

发明人： Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

IPC分类号： C25D3/02 ,  C25D21/14

CPC分类号： C25D21/14 ,  C25D17/001 ,  C25D17/002

摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.

摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。

公开(公告)号：US08128791B1

公开(公告)日：2012-03-06

申请号：US11590413

申请日：2006-10-30

申请人： Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

发明人： Bryan Buckalew ,  Jonathan Reid ,  John Sukamto ,  Zhian He ,  Seshasayee Varadarajan ,  Steven T. Mayer

IPC分类号： C25D21/14 ,  C25D3/38

CPC分类号： C25D21/14 ,  C25D17/001 ,  C25D17/002

摘要： In a copper electroplating apparatus having separate anolyte and catholyte portions, the concentration of anolyte components (e.g., acid or copper salt) is controlled by providing a diluent to the recirculating anolyte. The dosing of the diluent can be controlled by the user and can follow a pre-determined schedule. For example, the schedule may specify the diluent dosing parameters, so as to prevent precipitation of copper salt in the anolyte. Thus, precipitation-induced anode passivation can be minimized.

摘要翻译： 在具有单独阳极电解液和阴极电解液部分的铜电镀设备中，通过向循环阳极电解液提供稀释剂来控制阳极电解液组分（例如酸或铜盐）的浓度。 稀释剂的剂量可以由用户控制，并且可以遵循预定的时间表。 例如，时间表可以指定稀释剂配量参数，以防止铜盐在阳极电解液中沉淀。 因此，沉淀诱导的阳极钝化可以最小化。

公开(公告)号：US08257781B1

公开(公告)日：2012-09-04

申请号：US11201709

申请日：2005-08-11

申请人： Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

发明人： Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

IPC分类号： C23C14/00

CPC分类号： C23C18/1617 ,  C23C18/1632 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76841

摘要： A main reservoir holds cool reactant liquid. A reaction vessel for treating a substrate is connected to the main reservoir by a feed conduit. A heater is configured to heat reactant liquid in the feed conduit before the liquid enters the reaction vessel. Preferably, the heater is a microwave heater. A recycle conduit connects the reaction vessel with the main reservoir. Preferably, a recycle cooler cools reactant liquid in the recycle conduit before the liquid returns to the main reservoir. Preferably, an accumulation vessel is integrated in the feed conduit for accumulating, heating, conditioning and monitoring reactant liquid before it enters the reaction vessel. Preferably, a recycle accumulator vessel is integrated in the recycle conduit to accommodate reactant liquid as it empties out of the reaction vessel.

摘要翻译： 主要储存器容纳冷反应液体。 用于处理基板的反应容器通过进料导管连接到主容器。 加热器构造成在液体进入反应容器之前加热进料管道中的反应物液体。 优选地，加热器是微波加热器。 回收管道将反应容器与主储存器连接。 优选地，再循环冷却器在液体返回到主储存器之前冷却循环管道中的反应物液体。 优选地，积聚容器集成在进料管道中，用于在反应液进入反应容器之前积聚，加热，调节和监测反应液体。 优选地，再循环蓄能器容器集成在再循环管道中，以便当反应物液体从反应容器中排出时容纳反应液体。

公开(公告)号：US06967174B1

公开(公告)日：2005-11-22

申请号：US10357999

申请日：2003-02-03

申请人： Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jingbin Feng

发明人： Steven T. Mayer ,  Steve Taatjes ,  Andy McCutcheon ,  Jim Schall ,  Jingbin Feng

IPC分类号： H01L21/00 ,  H01L21/302

CPC分类号： H01L21/6708 ,  H01L21/67051

摘要： A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

摘要翻译： 晶片卡盘包括对准部件，其允许半导体晶片在不使用单独的对准阶段的情况下适当地对准卡盘。 对准构件可以是凸轮，例如，附接到晶片卡盘的臂。 当机器人臂将晶片放置在卡盘上时，这些构件可以采取对准位置。 在这个位置上，它们将晶片引导到相对于卡盘的适当对准位置。 在以特定转速旋转期间，对准构件远离晶片移动以允许液体蚀刻剂流过晶片的整个边缘区域。 在更高的旋转速度下，晶片被夹紧就位以防止其从卡盘上飞走。 夹紧凸轮或其他装置（例如对准构件本身）可以提供夹紧。

公开(公告)号：US06713122B1

公开(公告)日：2004-03-30

申请号：US10272693

申请日：2002-10-15

申请人： Steven T. Mayer ,  John B. Alexy ,  Jingbin Feng

发明人： Steven T. Mayer ,  John B. Alexy ,  Jingbin Feng

IPC分类号： B05D512

CPC分类号： H01L21/76843 ,  C23C18/1617 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/1692 ,  C23C18/40 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  Y10S977/89

摘要： Methods and apparatus for reducing heat load and air exposure when using an electroless plating fluid during a plating process, are presented. An electroless plating apparatus, including an electroless plating vessel and recirculation systems, is presented. The electroless plating vessel minimizes air exposure (and thus evaporative cooling and degradation) of the electroless plating fluid while the recirculation systems minimize heat load of the electroless plating fluid.

摘要翻译： 提出了在电镀过程中使用化学镀液时减少热负荷和空气暴露的方法和装置。 提出了一种包括无电电镀容器和再循环系统的化学镀设备。 化学镀电容器使无电解电镀液体的空气暴露（以及因此蒸发冷却和降解）最小化，同时再循环系统最小化化学镀液的热负荷。

公开(公告)号：US07690324B1

公开(公告)日：2010-04-06

申请号：US11200338

申请日：2005-08-09

申请人： Jingbin Feng ,  Steven T. Mayer ,  Daniel Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  Eric G. Webb ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

发明人： Jingbin Feng ,  Steven T. Mayer ,  Daniel Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  Eric G. Webb ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

IPC分类号： B05C11/02

CPC分类号： C23C18/1619 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76841

摘要： During fluid treatment of a substrate surface, a carrier/wafer assembly containing a substrate wafer closes the top of a microcell container. The carrier/wafer assembly and the container walls define a thin enclosed treatment volume that is filled with treating fluid, such as electroless plating solution. The thin fluid-treatment volume typically has a volume in a range of about from 100 ml to 500 ml. Preferably a container is heated and the treating fluid is pre-heated before being injected into the container. Preferably, the chemical composition, temperature, and other properties of fluid in the thin enclosed fluid-treatment volume are dynamically variable. A rinse shield and a rinse nozzle are located above the container. A carrier/wafer assembly in a rinse position substantially closes the top of the rinse shield.

摘要翻译： 在衬底表面的流体处理期间，包含衬底晶片的载体/晶片组件封闭微孔容器的顶部。 载体/晶片组件和容器壁限定了用处理流体例如化学镀溶液填充的薄封闭处理体积。 薄流体处理体积通常具有在约100ml至500ml范围内的体积。 优选地，将容器加热并且将处理流体在被注入容器之前被预热。 优选地，薄封闭流体处理体积中的流体的化学组成，温度和其它性质是动态可变的。 冲洗屏和冲洗喷嘴位于容器上方。 漂洗位置的载体/晶片组件基本上封闭了冲洗屏蔽的顶部。

公开(公告)号：US09109295B2

公开(公告)日：2015-08-18

申请号：US12577619

申请日：2009-10-12

申请人： Jonathan D. Reid ,  Seshasayee Varadarajan ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Seshasayee Varadarajan ,  Steven T. Mayer

IPC分类号： C25D17/00 ,  C25D21/18 ,  C25D3/38 ,  C25D21/02 ,  C25D21/14 ,  C25D7/12

CPC分类号： C25D17/00 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/02 ,  C25D21/14 ,  C25D21/18

摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating cell is configured for electroplating with concentrated electrolyte at a temperature of at least about 40° C. Electroplating with electrolytes having Cu2+ concentration of at least about 60 g/L at temperatures of at least about 40° C. results in very fast copper deposition rates, and is particularly well-suited for filling large, high aspect ratio features, such as through-silicon vias.

摘要翻译： 用于在半导体衬底上填充凹陷特征的电镀设备包括电解质浓缩器，其被配置用于浓缩具有Cu 2+离子的电解质，以形成在20℃下已经过饱和的浓缩电解质溶液。电解质保持在高于 20℃，例如至少约40℃。该设备还包括浓缩电解质储存器和电镀池，其中电镀单元被配置为在至少约40℃的温度下用浓缩电解质电镀。 在至少约40℃的温度下，具有Cu2 +浓度至少约60g / L的电解质的电镀导致非常快的铜沉积速率，并且特别适合于填充大的高纵横比特征，例如通过 硅通孔。

公开(公告)号：US08513124B1

公开(公告)日：2013-08-20

申请号：US12785205

申请日：2010-05-21

申请人： Thomas A. Ponnuswamy ,  John H. Sukamto ,  Jonathan D. Reid ,  Steven T. Mayer

发明人： Thomas A. Ponnuswamy ,  John H. Sukamto ,  Jonathan D. Reid ,  Steven T. Mayer

IPC分类号： H01L21/44

CPC分类号： H01L21/76873 ,  C25D3/38 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L2221/1089

摘要： Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the semi-noble metal layer that the copper seed layer is deposited on, and methods for promoting a more uniform copper seed layer deposition across a semiconductor wafer.

摘要翻译： 公开了一种沉积铜籽晶层的方法，该铜籽晶层用于随后电镀铜的体层。 铜种子层可以以不同的工艺沉积，包括CVD，PVD和电镀。 利用用于沉积铜籽晶层的电镀方法，公开了用于沉积铜合金晶种层的方法，用非腐蚀性电解质在半贵金属层上沉积铜籽晶层的方法，处理半贵金属的方法 沉积铜籽晶层的层，以及用于促进越过半导体晶片的更均匀的铜籽晶层沉积的方法。

公开(公告)号：US08500985B2

公开(公告)日：2013-08-06

申请号：US11827800

申请日：2007-07-13

申请人： Steven T. Mayer ,  John Stephen Drewery ,  Eric G. Webb

发明人： Steven T. Mayer ,  John Stephen Drewery ,  Eric G. Webb

IPC分类号： C25D5/34 ,  C25D5/00 ,  C25D5/02 ,  B05D5/00

CPC分类号： C25D5/022 ,  C25F5/00 ,  H05K3/07 ,  H05K3/108 ,  H05K2203/0108 ,  H05K2203/0392 ,  H05K2203/0537 ,  H05K2203/0713

摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.

公开(公告)号：US08481432B2

公开(公告)日：2013-07-09

申请号：US13116963

申请日：2011-05-26

申请人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

发明人： Steven T. Mayer ,  Daniel A. Koos ,  Eric Webb

IPC分类号： H01L21/302

CPC分类号： C23F1/02 ,  C23C18/1608 ,  C23C18/1834 ,  C23F1/18 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.