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    METHOD FOR FORMING SELF-ALIGNED DUAL SALICIDE IN CMOS TECHNOLOGIES
    17.
    发明申请
    METHOD FOR FORMING SELF-ALIGNED DUAL SALICIDE IN CMOS TECHNOLOGIES 有权
    在CMOS技术中形成自对准双重杀菌剂的方法

    公开(公告)号：US20060121665A1

    公开(公告)日：2006-06-08

    申请号：US11254934

    申请日：2005-10-20

    申请人： Sunfei Fang ,  Cyril Cabral ,  Chester Dziobkowski ,  John Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James Nakos ,  An Steegen ,  Clement Wann

    发明人： Sunfei Fang ,  Cyril Cabral ,  Chester Dziobkowski ,  John Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James Nakos ,  An Steegen ,  Clement Wann

    IPC分类号： H01L21/8238 ,  H01L21/44

    CPC分类号： H01L21/28518 ,  H01L21/823814 ,  H01L21/823835

    摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

    摘要翻译： 一种制造互补金属氧化物半导体（CMOS）器件的方法，其中所述方法包括在用于容纳第一类型半导体器件的半导体衬底中形成第一阱区; 在所述半导体衬底中形成用于容纳第二类型半导体器件的第二阱区; 用掩模屏蔽第一类型半导体器件; 在所述第二类型半导体器件上沉积第一金属层; 在所述第二类型半导体器件上执行第一自对准硅化物形成; 去除面膜; 在所述第一和第二类型半导体器件上沉积第二金属层; 以及在所述第一类型半导体器件上执行第二自对准硅化物形成。 该方法仅需要一个图案级别，并且消除图案覆盖，因为它也简化了在不同设备上形成不同硅化物材料的工艺。

    METHOD FOR FORMING SELF-ALIGNED DUAL FULLY SILICIDED GATES IN CMOS DEVICES
    18.
    发明申请
    METHOD FOR FORMING SELF-ALIGNED DUAL FULLY SILICIDED GATES IN CMOS DEVICES 失效
    在CMOS器件中形成自对准的双完全硅化物门的方法

    公开(公告)号：US20060121663A1

    公开(公告)日：2006-06-08

    申请号：US10904885

    申请日：2004-12-02

    申请人： Sunfei Fang ,  Cyril Cabral ,  Chester Dziobkowski ,  Christian Lavoie ,  Clement Wann

    发明人： Sunfei Fang ,  Cyril Cabral ,  Chester Dziobkowski ,  Christian Lavoie ,  Clement Wann

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823835

    摘要： A method of forming a dual self-aligned fully silicided gate in a CMOS device requiring only one lithography level, wherein the method comprises forming a first type semiconductor device having a first well region in a semiconductor substrate, first source/drain silicide areas in the first well region, and a first type gate isolated from the first source/drain silicide areas; forming a second type semiconductor device having a second well region in the semiconductor substrate, second source/drain silicide areas in the second well region, and a second type gate isolated from the second source/drain silicide areas; selectively forming a first metal layer over the second type semiconductor device; performing a first fully silicided (FUSI) gate formation on only the second type gate; depositing a second metal layer over the first and second type semiconductor devices; and performing a second FUSI gate formation on only the first type gate.

    摘要翻译： 一种在仅需要一个光刻级别的CMOS器件中形成双自对准全硅化栅的方法，其中所述方法包括在半导体衬底中形成具有第一阱区的第一类型半导体器件，其中第一源极/漏极硅化物区域 第一阱区域和从第一源极/漏极硅化物区域隔离的第一类型栅极; 形成在所述半导体衬底中具有第二阱区域的第二类型半导体器件，所述第二阱区域中的第二源极/漏极硅化物区域和与所述第二源极/漏极硅化物区域隔离的第二类型栅极; 在所述第二类型半导体器件上选择性地形成第一金属层; 仅在第二型栅极上执行第一完全硅化（FUSI）栅极形成; 在所述第一和第二类型半导体器件上沉积第二金属层; 以及仅在第一类型栅极上执行第二FUSI栅极形成。

    Raised silicide contact
    19.
    发明授权
    Raised silicide contact 有权
    引起硅化物接触

    公开(公告)号：US08927422B2

    公开(公告)日：2015-01-06

    申请号：US13525401

    申请日：2012-06-18

    申请人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

    发明人： Emre Alptekin ,  Nathaniel Berliner ,  Christian Lavoie ,  Kam-Leung Lee ,  Ahmet Serkan Ozcan

    IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238

    CPC分类号： H01L21/28518 ,  H01L21/02063 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/823814 ,  H01L23/485 ,  H01L29/665 ,  H01L29/66575 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a raised silicide contact including depositing a layer of silicon at a bottom of a contract trench using a gas cluster implant technique which accelerates clusters of silicon atoms causing them to penetrate a surface oxide on a top surface of the silicide, a width of the silicide and the contact trench are substantially equal; heating the silicide including the silicon layer to a temperature from about 300° C. to about 950° C. in an inert atmosphere causing silicon from the layer of silicon to react with the remaining silicide partially formed in the silicon containing substrate; and forming a raised silicide from the layer of silicon, wherein the thickness of the raised silicide is greater than the thickness of the silicide and the raised silicide protrudes above a top surface of the silicon containing substrate.

    摘要翻译： 一种用于形成高硅化物接触的方法，包括使用气体簇注入技术在合同沟槽的底部沉积硅层，所述气体簇注入技术加速硅原子簇，导致它们穿过硅化物顶表面上的表面氧化物，宽度 的硅化物和接触沟槽基本相等; 将包含硅层的硅化物在惰性气氛中加热至约300℃至约950℃的温度，使来自硅层的硅与部分形成在含硅衬底中的剩余硅化物反应; 以及从所述硅层形成凸起的硅化物，其中所述凸起的硅化物的厚度大于所述硅化物的厚度，并且所述硅化物在所述含硅衬底的顶表面上方突出。