公开(公告)号：US11469334B2

公开(公告)日：2022-10-11

申请号：US17041127

申请日：2019-03-11

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi ,  Kohei Sasaki

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/41 ,  H01L29/47 ,  H01L29/24 ,  H01L29/66

Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.