公开(公告)号：US08716821B2

公开(公告)日：2014-05-06

申请号：US13767978

申请日：2013-02-15

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  Dimitar Trifonov Trifonov

IPC: H01L27/14

CPC classification number: H01L31/075 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547

Abstract: A semiconductor device contains a photodiode which includes a buried collection region formed by a bandgap well to vertically confine photo-generated minority carriers. the bandgap well has the same conductivity as the semiconductor material immediately above and below the bandgap well. A net average doping density in the bandgap well is at least a factor of ten less than net average doping densities immediately above and below the bandgap well. A node of the photodiode, either the anode or the cathode, is connected to the buried collection region to collect the minority carriers, the polarity of the node matches the polarity of the minority carriers. The photodiode node connected to the buried collection region occupies less lateral area than the lateral area of the buried collection region.

Abstract translation: 半导体器件包括光电二极管，其包括由带隙阱形成的掩埋采集区域，以垂直地限制光产生的少数载流子。 带隙阱具有与带隙阱正上方和下方的半导体材料相同的导电性。 带隙阱中的净平均掺杂密度至少比带隙阱上方和下方的净平均掺杂密度小十倍。 光电二极管（阳极或阴极）的一个节点连接到埋藏采集区域以收集少数载流子，节点的极性与少数载流子的极性匹配。 连接到埋藏采集区的光电二极管节点占据比埋藏收集区域的侧向区域更小的横向面积。