公开(公告)号：US20140183589A1

公开(公告)日：2014-07-03

申请号：US14237515

申请日：2011-08-09

申请人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

发明人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

IPC分类号： H01L33/00 ,  H01L33/60

CPC分类号： H01L33/005 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/60

摘要： There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.

摘要翻译： 提供一种制造半导体发光器件和由此制造的半导体发光器件的方法。 根据示例性实施例，制造半导体发光器件的方法包括：通过在衬底的第一主表面上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构 所述基板具有彼此相对的第一和第二主表面; 在所述基板的所述第二主表面上形成反射膜，所述反射膜包括至少一个激光吸收区域; 以及通过从对应于所述激光吸收区域的所述发光结构的顶部的一部分照射激光而将所述发光结构和所述衬底分离成器件单元的划线处理到所述发光结构和所述衬底。

公开(公告)号：US20110205985A1

公开(公告)日：2011-08-25

申请号：US13002239

申请日：2009-06-30

申请人： Oh Seok Kim ,  Byung Duck Cho ,  Young Ky Kim ,  Yong Duk Cho ,  Jae Hawk Lee ,  Young Yong Lee ,  Jong Han Kim ,  Seung Wan Chae

发明人： Oh Seok Kim ,  Byung Duck Cho ,  Young Ky Kim ,  Yong Duk Cho ,  Jae Hawk Lee ,  Young Yong Lee ,  Jong Han Kim ,  Seung Wan Chae

IPC分类号： H04W72/04

CPC分类号： H04L47/10 ,  H04L47/14 ,  H04L47/30 ,  H04W28/14 ,  H04W52/286

摘要： A data transmission method for a high-speed packet access system includes: sending, by a user equipment, packet data containing scheduling information having size information of a packet buffer through an uplink channel to a base station, and sending quality indicator information and acknowledgement information through another uplink channel to the base station; determining, by the base station, the value of a turbo mode flag by comparing amounts of data stored in the packet buffer of the user equipment and a packet buffer of the base station respectively with preset thresholds; and deactivating, by the user equipment when the turbo mode flag of an order message contained in received control data, packet data reception and control data transmission, and redirecting transmit power of a specified transmitter to a packet data transmitter to increase transmit power of the packet data transmitter for faster packet data upload.

摘要翻译： 一种用于高速分组接入系统的数据传输方法包括：通过用户设备将包含具有通过上行链路信道的分组缓冲器的大小信息的调度信息的分组数据发送给基站，并且发送质量指示符信息和确认信息 通过到基站的另一上行链路信道; 通过将存储在用户设备的分组缓冲器中的数据与基站的分组缓冲器分别与预设阈值进行比较，来确定turbo模式标志的值; 并且当所接收的控制数据中包含的订购消息的turbo模式标志，分组数据接收和控制数据传输以及将指定发射机的发射功率重定向到分组数据发射机以增加分组的发射功率时，由用户设备停用 数据发送器，用于更快的数据包数据上

公开(公告)号：US07297988B2

公开(公告)日：2007-11-20

申请号：US11319343

申请日：2005-12-28

申请人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

发明人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

IPC分类号： H01L29/22 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

摘要翻译： 本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。 本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

公开(公告)号：US20140231859A1

公开(公告)日：2014-08-21

申请号：US14236582

申请日：2011-08-01

申请人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

发明人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

摘要翻译： 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

公开(公告)号：US08110847B2

公开(公告)日：2012-02-07

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US07250633B2

公开(公告)日：2007-07-31

申请号：US11220844

申请日：2005-09-08

申请人： Jun Ho Seo ,  Suk Kil Yoon ,  Seung Wan Chae

发明人： Jun Ho Seo ,  Suk Kil Yoon ,  Seung Wan Chae

IPC分类号： H01L27/15

CPC分类号： H01L33/04 ,  H01L27/0248 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016

摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.

摘要翻译： 公开了一种氮化镓基发光器件及其制造方法。 发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。 该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。 每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层 在绝缘膜上。 该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

公开(公告)号：US07183579B2

公开(公告)日：2007-02-27

申请号：US10811808

申请日：2004-03-30

申请人： Seung Wan Chae ,  Suk Kil Yoon

发明人： Seung Wan Chae ,  Suk Kil Yoon

IPC分类号： H01L27/15

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/40

摘要： Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.

摘要翻译： 公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层，形成在上包层上，由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。 合金层具有高透光率，形成欧姆接触，从而降低接触电阻。

公开(公告)号：US20090166669A1

公开(公告)日：2009-07-02

申请号：US12251782

申请日：2008-10-15

申请人： Je Won Kim ,  Yong Chun Kim ,  Sang Won Kang ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Je Won Kim ,  Yong Chun Kim ,  Sang Won Kang ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/025

摘要： A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.

摘要翻译： 一种氮化物半导体发光器件及其制造方法，其可以在确保均匀的电流扩展到有源层的同时防止诸如位错之类的晶体缺陷。 氮化物半导体发光器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的第一中间图案层，具有由Si化合物制成的纳米级点结构的第一中间图案层， 形成在所述第一氮化物半导体层上的第二氮化物半导体层，形成在所述第二氮化物半导体层上的第二中间图案层，所述第二中间图案层具有由Si化合物制成的纳米级点结构，所述第二中间图案层是电绝缘的 形成在第二氮化物半导体层上的第三氮化物半导体层，形成在第三氮化物半导体层上的有源层和形成在有源层上的p型氮化物半导体层。

公开(公告)号：US20080210972A1

公开(公告)日：2008-09-04

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US07235820B2

公开(公告)日：2007-06-26

申请号：US11315150

申请日：2005-12-23

申请人： Hyun Wook Shim ,  Suk Kil Yoon ,  Jae Chul Ro ,  Seung Wan Chae

发明人： Hyun Wook Shim ,  Suk Kil Yoon ,  Jae Chul Ro ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.

摘要翻译： 本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。 发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。 此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层 包层 反射金属层可以是Ag层或Al层。