利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

171 条记录 (耗时 0.029 秒)

    VAPOR DEPOSITION FILM
    11.
    发明申请
    VAPOR DEPOSITION FILM 审中-公开
    蒸气沉积膜

    公开(公告)号：US20110104437A1

    公开(公告)日：2011-05-05

    申请号：US12995564

    申请日：2009-06-12

    申请人： Gouhei Yamamura ,  Saori Sumi ,  Masahiro Kimura ,  Shunsuke Abe ,  Takashi Sato ,  Hiroyuki Sato ,  Junichi Masuda ,  Hiroshi Shinnumadate

    发明人： Gouhei Yamamura ,  Saori Sumi ,  Masahiro Kimura ,  Shunsuke Abe ,  Takashi Sato ,  Hiroyuki Sato ,  Junichi Masuda ,  Hiroshi Shinnumadate

    IPC分类号： B32B3/10

    CPC分类号： C23C14/20 ,  Y10T428/24355

    摘要： A vapor deposition film has a vapor deposition layer composed of a metal or an inorganic oxide formed on at least one side of a resin layer (A) which is composed of a resin composition (1). The resin composition (1) is a polyglycol acid containing not less than 70% by mole of a specific structure (a structure represented by formula (1)) as a repeating unit. The surface on which the vapor deposition layer is deposited has a center line average roughness of 5-50 nm. The vapor deposition film has excellent gas barrier properties, excellent workability and decomposition resistance sufficient for practical use.

    摘要翻译： 蒸镀膜具有由树脂组合物（1）构成的树脂层（A）的至少一面上形成的金属或无机氧化物构成的气相沉积层。 树脂组合物（1）是作为重复单元的特定结构（式（1）所示的结构）不低于70摩尔％的聚乙二醇。 沉积有蒸镀层的表面的中心线平均粗糙度为5-50nm。 气相沉积膜具有优异的阻气性，优异的可加工性和耐分解性足以实际应用。

    Electron beam welding method
    17.
    发明授权
    Electron beam welding method 有权
    电子束焊接法

    公开(公告)号：US09162316B2

    公开(公告)日：2015-10-20

    申请号：US13812074

    申请日：2011-07-20

    申请人： Ryuichi Narita ,  Takashi Hanioka ,  Tadahiro Kimura ,  Masahiro Kimura ,  Masao Shiota

    发明人： Ryuichi Narita ,  Takashi Hanioka ,  Tadahiro Kimura ,  Masahiro Kimura ,  Masao Shiota

    IPC分类号： B23K15/00

    CPC分类号： B23K15/0046 ,  B23K15/00 ,  B23K15/0053 ,  B23K15/006

    摘要： An electron beam welding method capable of restoring toughness even when high heat input welding is performed. The electron beam welding method comprises: forming a first weld bead (3) so as to include a groove (2) provided at the butt portions of two base materials (1), and forming a second weld bead (4) and a third weld bead (5) having a narrower width than the first weld bead (3), at predetermined positions displaced from the groove (2) and centered symmetrically about the butt portions so as to include a portion of the first weld bead (3), using a lower heat input than that used during formation of the first weld bead (3).

    摘要翻译： 即使进行高热输入焊接也能够恢复韧性的电子束焊接方法。 电子束焊接方法包括：形成第一焊道（3），以包括设置在两个基材（1）的对接部分处的凹槽（2），并形成第二焊道（4）和第三焊缝 具有比第一焊道（3）窄的宽度的胎圈（5），在从凹槽（2）移位并围绕对接部分对称地定中心的预定位置处，以便包括第一焊道（3）的一部分，使用 比在第一焊道（3）的形成期间使用的热输入更低的热输入。

    PATTERN FORMING METHOD
    18.
    发明申请
    PATTERN FORMING METHOD 有权
    图案形成方法

    公开(公告)号：US20140199852A1

    公开(公告)日：2014-07-17

    申请号：US14240615

    申请日：2012-08-16

    申请人： Masahiro Kimura ,  Tomonori Umezaki ,  Akiou Kikuchi

    发明人： Masahiro Kimura ,  Tomonori Umezaki ,  Akiou Kikuchi

    IPC分类号： H01L21/3213 ,  H01L27/115

    CPC分类号： H01L21/32135 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/6719 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

    摘要： A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.

    摘要翻译： 提供了图案形成方法，用于形成包括绝缘膜和导电膜的多层膜的图案，所述多层膜层叠在一起并且在基板上形成有孔，其中导电膜从孔的内周表面选择性地精确地凹入。 图案形成方法包括以下步骤：在衬底上交替堆叠至少两个绝缘膜和至少两个多晶硅膜，以形成包括至少两个绝缘膜和至少两个多晶硅膜的多层膜; 在所述多层膜中形成延伸穿过所述至少两个绝缘膜和所述至少两个多晶硅膜的孔; 并通过各向同性蚀刻从孔的侧壁选择性地蚀刻多晶硅膜，通过向惰性气体中稀释含氟卤素气体而制备的蚀刻气体。

    Substrate treating method
    19.
    发明授权
    Substrate treating method 有权
    底物处理方法

    公开(公告)号：US08608864B2

    公开(公告)日：2013-12-17

    申请号：US13178059

    申请日：2011-07-07

    申请人： Masahiro Kimura ,  Hiroaki Takahashi ,  Tadashi Maegawa ,  Toyohide Hayashi

    发明人： Masahiro Kimura ,  Hiroaki Takahashi ,  Tadashi Maegawa ,  Toyohide Hayashi

    IPC分类号： B08B3/00 ,  B08B7/04 ,  B08B6/00

    CPC分类号： H01L21/67086 ,  H01L21/67057

    摘要： A substrate treating method for treating substrates with a treating liquid includes a deionized water cleaning step for supplying deionized water from an injection pipe and cleaning the substrates inside a cleaning tank with deionized water, then a replacing step for injecting a solvent from a solvent injector and replacing the deionized water with the solvent, a separating and removing step for switching a channel to a branch pipe and causing a separator to remove the deionized water from the treating liquid, and an adsorbing and removing step for switching the channel to another branch pipe and causing a deionized water remover to adsorb and remove the deionized water from the treating liquid.

    摘要翻译： 用处理液处理基板的基板处理方法包括：去离子水清洗步骤，用于从注入管供给去离子水，并用去离子水清洗清洗槽内的基板，然后用溶剂注入器注入溶剂的替换步骤;以及 用溶剂代替去离子水，分离和去除步骤，用于将通道切换到分支管并使分离器从处理液中除去去离子水;以及吸附和去除步骤，用于将通道切换到另一分支管，以及 使去离子水去除剂从处理液中吸附并除去去离子水。

    Exhaust emission control device
    20.
    发明授权
    Exhaust emission control device 有权
    废气排放控制装置

    公开(公告)号：US08425851B2

    公开(公告)日：2013-04-23

    申请号：US12674106

    申请日：2008-08-27

    申请人： Masahiro Kimura

    发明人： Masahiro Kimura

    IPC分类号： B01D50/00

    CPC分类号： B01D53/9454 ,  B01D2251/2067 ,  B01D2257/404 ,  B01D2257/702 ,  F01N3/021 ,  F01N3/2066 ,  F01N3/28 ,  F01N13/009 ,  F01N13/0097 ,  F01N13/1822 ,  F01N2610/02 ,  Y02A50/2324 ,  Y02A50/2325 ,  Y02T10/22 ,  Y02T10/24

    摘要： The invention has its object to provide an exhaust emission control device which can be favorably mounted on a vehicle without causing relative twisting between a particulate filter and a selective reduction catalyst. In the exhaust emission control device in which a particulate filter and a selective reduction catalyst are housed by casings, respectively, and arranged side by side such that inlet ends of the filter and the catalyst are oriented to one and the same direction, an S-shaped communication passage being provided for introduction of the exhaust gas from an outlet end of the filter to an inlet end of the adjacent catalyst through antithetical turnabout, urea water being addible intermediately of the communication passage, the casings for the filter and catalyst are integrally restrained by rigid plates (restraining members).

    摘要翻译： 本发明的目的是提供一种可以有利地安装在车辆上的废气排放控制装置，而不会引起颗粒过滤器和选择还原催化剂之间的相对扭转。 在分别由壳体容纳有微粒过滤器和选择还原催化剂的排气排放控制装置中，并排配置，使得过滤器和催化剂的入口端部朝向同一方向， 设置有用于将废气从过滤器的出口端引导到相邻催化剂的入口端的反向离合器，形成连通通道中间的尿素水，过滤器和催化剂的壳体整体受到限制 通过刚性板（限制构件）。