公开(公告)号：US20120218715A1

公开(公告)日：2012-08-30

申请号：US13307029

申请日：2011-11-30

申请人： Shinichi HIROSE ,  Taisuke Iwai ,  Yoshitaka Yamaguchi ,  Yohei Yagishita ,  Yukie Sakita ,  Masaaki Norimatsu

发明人： Shinichi HIROSE ,  Taisuke Iwai ,  Yoshitaka Yamaguchi ,  Yohei Yagishita ,  Yukie Sakita ,  Masaaki Norimatsu

IPC分类号： H05K7/20 ,  H01L21/50

CPC分类号： H01L23/433 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/373 ,  H01L23/3737 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29076 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/83192 ,  H01L2224/8336 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/15788 ,  H01L2924/16152 ,  Y10T428/24124 ,  Y10T428/24132 ,  Y10T428/24165 ,  Y10T428/24174 ,  Y10T428/2913 ,  Y10T428/30 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method of manufacturing an electronic component includes disposing a heat radiation material including a plurality of linear structures of carbon atoms and a filling layer of a thermoplastic resin provided among the plurality of linear structures above a first substrate, disposing a blotting paper above the heat radiation material, making a heat treatment at a temperature higher than a melting temperature of the thermoplastic resin and absorbing the thermoplastic resin above the plurality of linear structures with the absorption paper, removing the blotting paper, and adhering the heat radiation material to the first substrate by cooling to solidify the thermoplastic resin.

摘要翻译： 一种电子部件的制造方法，其特征在于，在第一基板的上方设置包含碳原子数的多个线状结构的热辐射材料和设置在所述多个线状结构体中的热塑性树脂填充层，在所述热辐射上设置吸墨纸 材料，在高于热塑性树脂的熔融温度的温度下进行热处理，并用吸收纸吸收多个线性结构上方的热塑性树脂，除去吸墨纸，并将散热材料粘附到第一衬底上 冷却固化热塑性树脂。

公开(公告)号：US08837149B2

公开(公告)日：2014-09-16

申请号：US13307029

申请日：2011-11-30

申请人： Shinichi Hirose ,  Taisuke Iwai ,  Yoshitaka Yamaguchi ,  Yohei Yagishita ,  Yukie Sakita ,  Masaaki Norimatsu

发明人： Shinichi Hirose ,  Taisuke Iwai ,  Yoshitaka Yamaguchi ,  Yohei Yagishita ,  Yukie Sakita ,  Masaaki Norimatsu

IPC分类号： H05K7/20 ,  H01L21/50 ,  H01L21/48 ,  H01L23/433 ,  H01L23/42 ,  H01L23/373

CPC分类号： H01L23/433 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/373 ,  H01L23/3737 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29076 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/83192 ,  H01L2224/8336 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/15788 ,  H01L2924/16152 ,  Y10T428/24124 ,  Y10T428/24132 ,  Y10T428/24165 ,  Y10T428/24174 ,  Y10T428/2913 ,  Y10T428/30 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method of manufacturing an electronic component includes disposing a heat radiation material including a plurality of linear structures of carbon atoms and a filling layer of a thermoplastic resin provided among the plurality of linear structures above a first substrate, disposing a blotting paper above the heat radiation material, making a heat treatment at a temperature higher than a melting temperature of the thermoplastic resin and absorbing the thermoplastic resin above the plurality of linear structures with the absorption paper, removing the blotting paper, and adhering the heat radiation material to the first substrate by cooling to solidify the thermoplastic resin.

摘要翻译： 一种电子部件的制造方法，其特征在于，在第一基板的上方设置包含碳原子数的多个线状结构的热辐射材料和设置在所述多个线状结构体中的热塑性树脂填充层，在所述热辐射上设置吸墨纸 材料，在高于热塑性树脂的熔融温度的温度下进行热处理，并用吸收纸吸收多个线性结构上方的热塑性树脂，除去吸墨纸，并将散热材料粘附到第一衬底上 冷却固化热塑性树脂。

公开(公告)号：US20120236502A1

公开(公告)日：2012-09-20

申请号：US13403156

申请日：2012-02-23

申请人： Yoshitaka Yamaguchi ,  Taisuke Iwai ,  Masaaki Norimatsu ,  Shinichi Hirose ,  Yohei Yagishita ,  Yukie Sakita

发明人： Yoshitaka Yamaguchi ,  Taisuke Iwai ,  Masaaki Norimatsu ,  Shinichi Hirose ,  Yohei Yagishita ,  Yukie Sakita

IPC分类号： H05K7/20 ,  B23P11/00 ,  B05D5/12 ,  B32B5/16

CPC分类号： H01L23/433 ,  F28F2013/006 ,  F28F2255/20 ,  H01L23/373 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/10158 ,  H01L2924/16152 ,  Y10T29/49826 ,  Y10T428/249924

摘要： According to an aspect of the embodiments, a sheet-shaped structure includes a bundle structure that includes a plurality of line-shaped structures of carbon atoms, a covering layer that covers the line-shaped structures in longitudinal directions of the line-shaped structures, respectively, and a filling layer that is disposed between the line-shaped structures covered with the covering layer.

摘要翻译： 根据实施例的一个方面，片状结构包括：束结构，其包括多个碳原子的线状结构;覆盖层，其在线状结构的纵向方向上覆盖线状结构; 以及填充层，其设置在被覆盖层覆盖的线状结构之间。

公开(公告)号：US09537075B2

公开(公告)日：2017-01-03

申请号：US13286339

申请日：2011-11-01

申请人： Daiyu Kondo ,  Shintaro Sato ,  Taisuke Iwai

发明人： Daiyu Kondo ,  Shintaro Sato ,  Taisuke Iwai

IPC分类号： H01L35/28 ,  H01L35/22 ,  H01L29/16 ,  C01B31/04 ,  H01L35/32

CPC分类号： H01L35/22 ,  C01B32/20 ,  H01L29/1606 ,  H01L35/32 ,  Y10T428/261

摘要： The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.

摘要翻译： 石墨结构包括多个石墨结构域，其中石墨烯层的层体以半球状弯曲，其中多个区域布置在平面中，并且相邻的区域彼此接触。

公开(公告)号：US20120042922A1

公开(公告)日：2012-02-23

申请号：US13286339

申请日：2011-11-01

申请人： Daiyu Kondo ,  Shintaro Sato ,  Taisuke Iwai

发明人： Daiyu Kondo ,  Shintaro Sato ,  Taisuke Iwai

IPC分类号： H01L35/28 ,  C01B31/00 ,  H01L35/34 ,  H01L35/22 ,  B82Y30/00

CPC分类号： H01L35/22 ,  C01B32/20 ,  H01L29/1606 ,  H01L35/32 ,  Y10T428/261

摘要： The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.

摘要翻译： 石墨结构包括多个石墨结构域，其中石墨烯层的层体以半球状弯曲，其中多个区域布置在平面中，并且相邻的区域彼此接触。

公开(公告)号：US08029760B2

公开(公告)日：2011-10-04

申请号：US12240238

申请日：2008-09-29

申请人： Daiyu Kondo ,  Akio Kawabata ,  Shintaro Sato ,  Taisuke Iwai ,  Mizuhisa Nihei

发明人： Daiyu Kondo ,  Akio Kawabata ,  Shintaro Sato ,  Taisuke Iwai ,  Mizuhisa Nihei

IPC分类号： D01F9/12 ,  D01F9/127

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/02 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/752 ,  Y10S977/842 ,  Y10S977/843

摘要： According to a method of manufacturing carbon nanotubes, minute concavities and convexities are formed at a surface of a substrate, a catalyst metal layer having a predetermined film thickness is formed on the surface having the concavities and convexities, the substrate is subject to a heat treatment at a predetermined temperature to change the catalyst metal layer into a plurality of isolated fine particles. The catalyst metal fine particles have a uniform particle diameter and uniform distribution. Then, the substrate supporting the plurality of fine particles is placed in a carbon-containing gas atmosphere to grow carbon nanotubes on the catalyst metal fine particles by a CVD method using the carbon-containing gas. The carbon nanotubes can be formed to have a desired diameter and a desired shell number with superior reproducibility.

摘要翻译： 根据制造碳纳米管的方法，在基板的表面形成微小的凹凸，在具有凹凸的表面上形成具有规定的膜厚的催化剂金属层，对基板进行热处理 在预定温度下将催化剂金属层改变成多个分离的细颗粒。 催化剂金属微粒具有均匀的粒径和均匀的分布。 然后，将支撑多个微粒的基板置于含碳气体气氛中，通过使用含碳气体的CVD法在催化剂金属微粒上生长碳纳米管。 碳纳米管可以形成为具有期望的直径和期望的壳数，具有优异的再现性。

公开(公告)号：US20120153455A1

公开(公告)日：2012-06-21

申请号：US13241803

申请日：2011-09-23

申请人： Yoshihiro Mizuno ,  Ikuo Soga ,  Osamu Tsuboi ,  Taisuke Iwai

发明人： Yoshihiro Mizuno ,  Ikuo Soga ,  Osamu Tsuboi ,  Taisuke Iwai

IPC分类号： H01L23/34 ,  B23P15/26 ,  F28D15/00

CPC分类号： H01L23/473 ,  F28F3/12 ,  H01L2924/0002 ,  Y10T29/49393 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor chip having an electric circuit; and a cooling device including at least one channel serving as a flow path through which coolant flows, an external surface including projections, and a metallic layer formed over the external surface including the projections. In the semiconductor device, the projections of the external surface of the cooling device are brought into contact with a first surface of the semiconductor chip via the metallic layer such that the semiconductor chip is cooled by allowing the coolant to flow through the channel formed in the cooling device.

摘要翻译： 半导体器件包括具有电路的半导体芯片; 以及冷却装置，其包括用作冷却剂流过的流路的至少一个通道，包括突起的外表面和形成在包括突起的外表面上的金属层。 在半导体装置中，冷却装置的外表面的突起经由金属层与半导体芯片的第一表面接触，使得半导体芯片通过使冷却剂流过形成在半导体芯片 冷却装置。

公开(公告)号：US20070267735A1

公开(公告)日：2007-11-22

申请号：US11706347

申请日：2007-02-15

申请人： Yuji Awano ,  Masataka Mizukoshi ,  Taisuke Iwai ,  Tomoji Nakamura

发明人： Yuji Awano ,  Masataka Mizukoshi ,  Taisuke Iwai ,  Tomoji Nakamura

IPC分类号： H01L23/48

CPC分类号： H01L23/49811 ,  H01L21/6835 ,  H01L23/49877 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/72 ,  H01L24/73 ,  H01L24/90 ,  H01L24/91 ,  H01L2224/03505 ,  H01L2224/0401 ,  H01L2224/11003 ,  H01L2224/13078 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81901 ,  H01L2224/81904 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/014 ,  Y10S977/72 ,  Y10S977/721 ,  Y10S977/722 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/766 ,  Y10S977/784 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938 ,  Y10S977/963 ,  H01L2924/00 ,  H01L2224/72

摘要： A plurality of conductive pads (2) are formed on a mounting surface of a mounting board. Conductive pads (11) are formed on a principal surface of a semiconductor chip (10) at positions corresponding to the conductive pads of the mounting board, when the principal surface faces toward the mounting board. A plurality of conductive nanotubes (12) extend from the conductive pads of one of the mounting board and the semiconductor chip. A press mechanism (3) presses the semiconductor chip against the mounting board and restricts a position of the semiconductor chip on the mounting surface to mount the semiconductor chip on the mounting board, in a state that tips of the conductive nanotubes are in contact with the corresponding conductive pads not formed with the conductive nanotubes.

摘要翻译： 多个导电焊盘（2）形成在安装板的安装表面上。 当主表面朝向安装板时，导电焊盘（11）在与安装板的导电焊盘相对应的位置处形成在半导体芯片（10）的主表面上。 多个导电纳米管（12）从安装板和半导体芯片之一的导电焊盘延伸。 按压机构（3）将半导体芯片压靠在安装基板上，并将半导体芯片的位置限制在安装面上，以将半导体芯片安装在安装基板上，导电性纳米管的尖端与 不形成导电纳米管的相应的导电焊盘。

公开(公告)号：US08853519B2

公开(公告)日：2014-10-07

申请号：US13116663

申请日：2011-05-26

申请人： Taisuke Iwai

发明人： Taisuke Iwai

IPC分类号： H01L35/18 ,  H01L31/18 ,  H01L35/02 ,  H01L35/32 ,  H01L35/26

CPC分类号： H01L35/26 ,  H01L35/32

摘要： In order to achieve a thermoelectric transducer exhibiting a higher conversion efficiency and an electronic apparatus including such a thermoelectric transducer, a thermoelectric conversion device is provided, including a semiconductor stacked structure including semiconductor layers stacked with each other, the semiconductor layers being made from different semiconductor materials, in which a material and a composition of each semiconductor layer in the semiconductor stacked structure are selected so as to avoid conduction-band or valence-band discontinuity.

摘要翻译： 为了实现具有更高转换效率的热电换能器和包括这种热电换能器的电子设备，提供了一种包括半导体层叠结构的热电转换器件，该半导体堆叠结构包括彼此堆叠的半导体层，半导体层由不同的半导体 其中选择半导体层叠结构中的每个半导体层的材料和组成以避免导带或价带不连续的材料。

公开(公告)号：US08735274B2

公开(公告)日：2014-05-27

申请号：US12823750

申请日：2010-06-25

申请人： Masataka Mizukoshi ,  Taisuke Iwai

发明人： Masataka Mizukoshi ,  Taisuke Iwai

IPC分类号： H01L21/44

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  H01L21/6835 ,  H01L21/76885 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/1094 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/11003 ,  H01L2224/1147 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2224/81054 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/13091 ,  H05K3/4007 ,  H05K2201/026 ,  H05K2203/0338 ,  H05K2203/0557

摘要： Electrodes formed in a partial surface area of a semiconductor substrate and distal ends of conductive nanotubes bristled on a surface of a growth substrate, are bombarded with rare gas plasma. The distal ends of the conductive nanotubes bombarded with the rare gas plasma are brought into contact with the electrodes bombarded with the rare gas plasma to fix the conductive nanotubes to the electrodes. The growth substrate is separated from the semiconductor substrate in such a manner that the conductive nanotubes fixed to the electrodes remain on the electrodes formed on the semiconductor substrate.

摘要翻译： 在半导体衬底的局部表面区域形成的电极和在生长衬底的表面上形成的导电性纳米管的末端用稀有气体等离子体轰击。 使用稀有气体等离子体轰击的导电性纳米管的末端与用稀有气体等离子体轰击的电极接触，将导电性纳米管固定在电极上。 将生长衬底与半导体衬底分离，使得固定到电极上的导电纳米管保持在形成在半导体衬底上的电极上。