公开(公告)号：US20210257360A1

公开(公告)日：2021-08-19

申请号：US17021251

申请日：2020-09-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiun-Ming Kuo ,  Pei-Ling Gao ,  Chen-Hsuan Liao ,  Hung-Ju Chou ,  Chih-Chung Chang ,  Che-Yuan Hsu

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a first fin extending along a first direction, a second fin extending parallel to the first fin, and a gate structure over and wrapping around the first fin and the second fin, the gate structure extending along a second direction perpendicular to the first direction. The first fin bents away from the second fin along the second direction and the second fin bents away from the first fin along the second direction.