公开(公告)号：US11201230B2

公开(公告)日：2021-12-14

申请号：US16660279

申请日：2019-10-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Hsuan Hsiao ,  Shu-Yuan Ku ,  Chih-Chang Hung ,  I-Wei Yang ,  Chih-Ming Sun

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first metal gate stack and a second metal gate stack over a semiconductor substrate. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack. The semiconductor device structure further includes an insulating structure between the first metal gate stack and the second metal gate stack. The insulating structure has a first convex surface facing towards the first metal gate stack.