公开(公告)号：US5401330A

公开(公告)日：1995-03-28

申请号：US275274

申请日：1994-07-15

申请人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

发明人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/075

CPC分类号： H01L31/204 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.

摘要翻译： 本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件，能够大批量生产。 一种光电元件，其中包括至少包含硅的非单晶半导体材料构成的光反射层，光反射倍增层，n型层，i型层和p型层，以及 透明电极依次形成在导电性基板上，其特征在于，所述光反射层包含银或铜原子作为主要成分，并且还含有氧，氮和碳中的至少一种。 此外，在另一个实施方案中，该光电元件的特征在于，所述光反射层包含银作为主要成分，并且还含有铅，铅和金，或铅，金和第一过渡族金属，其量为2至 100 ppm。

公开(公告)号：US5236798A

公开(公告)日：1993-08-17

申请号：US587990

申请日：1990-09-25

申请人： Tatsuyuki Aoike ,  Koichi Matsuda ,  Keishi Saitoh ,  Mitsuyuki Niwa ,  Masafumi Sano ,  Hisami Tanaka

发明人： Tatsuyuki Aoike ,  Koichi Matsuda ,  Keishi Saitoh ,  Mitsuyuki Niwa ,  Masafumi Sano ,  Hisami Tanaka

IPC分类号： G03G5/08 ,  C08G77/60 ,  C08K3/16 ,  C08K5/17 ,  G03F7/075 ,  G03G5/147 ,  H01L51/30

CPC分类号： G03F7/0754 ,  C08G77/60 ,  C08K3/16 ,  C08K5/17 ,  H01L51/0094

摘要： An electrophotographic light receiving member comprising a substrate and a light receiving layer having a multi-layered structure disposed on said substrate, said light receiving layer comprising at least a photoconductive layer and a surface layer being stacked in this order from the side of said substrate, said photoconductive layer being formed of a non-single crystal material containing silicon atoms as the matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said surface layer being formed of a polysilane compound having a weight average molecular weight of 6000 to 200000 and having at least an oxygen-free organic group selected from the group consisting of alkyl group, cycloalkyl group, aryl group and aralkyl group at the terminals.

摘要翻译： 一种电子照相光接收构件，包括基板和设置在所述基板上的具有多层结构的光接收层，所述光接收层至少包含光电导层和从所述基板侧依次堆叠的表面层， 所述光电导层由含有硅原子作为基体的非单晶材料和选自氢原子和卤素原子的至少一种原子形成，所述表面层由具有重量的聚硅烷化合物形成 平均分子量为6000〜200000，并且在末端具有至少一个选自烷基，环烷基，芳基和芳烷基的无氧有机基团。

公开(公告)号：US5324364A

公开(公告)日：1994-06-28

申请号：US45176

申请日：1993-04-13

申请人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

发明人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/03765 ,  H01L31/065 ,  H01L31/075 ,  Y02E10/548

摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

摘要翻译： 一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a） 基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于 所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。

公开(公告)号：US5190838A

公开(公告)日：1993-03-02

申请号：US572354

申请日：1990-08-27

申请人： Keishi Saitoh ,  Masafumi Sano ,  Koichi Matsuda

发明人： Keishi Saitoh ,  Masafumi Sano ,  Koichi Matsuda

IPC分类号： G03G5/082

CPC分类号： G03G5/08214 ,  G03G5/08221 ,  G03G5/08235

摘要： An electrophotographic image-forming member which comprises a substrate for electrophotography and a light receiving layer being disposed on said substrate, said light receiving layer comprising a photoconductive layer formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared adsorption spectrum.The light receiving layer may further comprise a charge injection inhibition layer or/and a surface layer.The electrophotographic image-forming member can be used in a high-speed continuous electrophotographic copying systems using a coherent light laser beam as the light source without accompaniment of the problems which are found on conventional amorphous silicon carbide system electrophotographic image-forming members.

摘要翻译： 一种电子照相图像形成部件，包括用于电子照相的基板和设置在所述基板上的受光层，所述光接收层包括由含有硅原子作为基体的非单晶碳化硅膜形成的光电导层，碳 原子数为5〜15原子％，氢原子为1〜10原子％，含有比例为1％以下的石墨结构域，单位体积的重量比为0.01〜0.05，CH 键拉伸模式和Si-H键拉伸模式在红外吸收光谱中。 光接收层还可以包括电荷注入抑制层或/和表面层。 电子照相图像形成构件可以用于使用相干光激光束作为光源的高速连续电子照相复印系统，而不伴随在常规非晶碳化硅系统电子照相成像构件上发现的问题。

公开(公告)号：US06609147B1

公开(公告)日：2003-08-19

申请号：US09227689

申请日：1999-01-08

申请人： Koichi Matsuda ,  Taketo Naito ,  Hiroshi Ueno

发明人： Koichi Matsuda ,  Taketo Naito ,  Hiroshi Ueno

IPC分类号： G06F1516

CPC分类号： H04L12/1813 ,  A63F13/12 ,  A63F13/87 ,  A63F2300/50 ,  A63F2300/572 ,  H04L12/1827 ,  H04L67/38

摘要： Communication between users not accessing a shared virtual reality space at the same time is realized. A client terminal sends a calling card and a mail. A hard disk drive of a mail server holds the calling card and the mail. When a user to whom the calling card and the mail are to be sent accesses the shared virtual reality space, the mail server transfers the calling card and the mail to the client terminal.

摘要翻译： 同时实现不访问共享虚拟现实空间的用户之间的通信。 客户终端发送电话卡和邮件。 邮件服务器的硬盘驱动器保存电话卡和邮件。 当要向其发送呼叫卡和邮件的用户访问共享虚拟现实空间时，邮件服务器将呼叫卡和邮件传送到客户终端。

公开(公告)号：US06346956B2

公开(公告)日：2002-02-12

申请号：US08939152

申请日：1997-09-29

申请人： Koichi Matsuda

发明人： Koichi Matsuda

IPC分类号： G06F1300

CPC分类号： G06F17/30994

摘要： To allow the user who wants to use three-dimensional virtual reality spaces to easily select a desired three-dimensional virtual reality space. When the browser is started with data about a three-dimensional virtual reality space stored in a predetermined directory, this predetermined directory is searched. According to the search result, an entry room in which three-dimensional icons representing three-dimensional virtual reality spaces are arranged is generated and displayed. The three-dimensional icons arranged in the entry room are linked to the data of the corresponding three-dimensional virtual reality spaces. When user clicks on a desired three-dimensional icon, the corresponding three-dimensional virtual reality space is displayed.

摘要翻译： 为了允许想要使用三维虚拟现实空间的用户容易地选择所需的三维虚拟现实空间。 当浏览器从存储在预定目录中的三维虚拟现实空间的数据开始时，搜索该预定目录。 根据搜索结果，生成并显示表示三维虚拟现实空间的三维图标的入口室。 安排在入口室中的三维图标与相应的三维虚拟现实空间的数据相关联。 当用户点击所需的三维图标时，显示相应的三维虚拟现实空间。

公开(公告)号：US06331672B1

公开(公告)日：2001-12-18

申请号：US08807590

申请日：1997-02-27

申请人： Koichi Matsuda ,  Jinsho Matsuyama

发明人： Koichi Matsuda ,  Jinsho Matsuyama

IPC分类号： H01L3100

CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02366 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer has holes on the surface, is provided. Additionally, a photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein diffuse reflectance of the back reflector is 3 to 50%, is provided. According to the above-described structures, processability, yield and reliability of the photovoltaic cell can be improved, while photoelectric conversion efficiency is maintained at a high level due to back-surface diffuse reflection.

摘要翻译： 提供了一种包括基板，后反射器，透明导电层和光电转换层的光电池，其中透明导电层在表面上具有孔。 此外，提供了包括基板，后反射器，透明导电层和光电转换层的光伏电池，其中后反射器的漫反射率为3至50％。 根据上述结构，可以提高光伏电池的加工性，成品率和可靠性，同时由于背面漫反射，光电转换效率保持在高水平。

公开(公告)号：US06184456B2

公开(公告)日：2001-02-06

申请号：US08985312

申请日：1997-12-04

申请人： Jinsho Matsuyama ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Koichi Matsuda

IPC分类号： H01L3100

CPC分类号： H01L31/0368 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.

摘要翻译： 本发明的光电器件具有非单晶半导体。 非单晶半导体的下面的层具有多晶结构。 暴露在下层的表面的多晶体的单个晶粒具有平滑的表面。 下层的表面沿着多晶体的晶界或在晶界处的突起或凹陷具有台阶。 或者，具有粗糙表面的多晶粒和具有平滑表面的多晶粒通常存在于多晶层的表面中。 多晶层可以是光伏器件的衬底。 本发明通过使用这种多晶层，提供了高度可靠且高效的薄膜光伏器件，其增强了半导体层的光吸收，并且即使在实际可采用的低成本下也可以以高产率生产 同时消除已知艺术在可加工性，产量和耐久性方面的缺陷。

公开(公告)号：US5637358A

公开(公告)日：1997-06-10

申请号：US376652

申请日：1995-01-20

申请人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

发明人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

IPC分类号： C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32495

摘要： In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.

摘要翻译： 在用于在基板上形成功能沉积膜的微波等离子体化学气相沉积设备中，该微波等离子体化学气相沉积设备包括一个基本上封闭的成膜室，该室具有一个圆周壁，该圆周壁的端部气密地设置有一个微波引入窗口， 电源连接，所述成膜室具有用于引起等离子体放电的放电空间，导致在基板上形成沉积膜，所述基板位于布置在所述成膜室中的基板保持器和所述成膜室 设置有用于将成膜原料气体供应到所述放电空间的装置和用于抽出所述成膜室的装置，其改进包括可移动地放置在位于所述膜形成室中的所述微波引入窗口的表面上的电介质片， 形成室，其处于所述电介质片面对面的状态 与微波引入窗口的所述表面发生反应。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。