公开(公告)号：US5689124A

公开(公告)日：1997-11-18

申请号：US453397

申请日：1995-05-30

申请人： Yoji Morikawa ,  Takashi Aigo

发明人： Yoji Morikawa ,  Takashi Aigo

IPC分类号： H01L29/10 ,  H01L29/417 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328

CPC分类号： H01L29/778 ,  H01L29/1075 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/812

摘要： A semiconductor device comprises a silicon substrate, at least one compound semiconductor layer formed on the silicon substrate and including a GaAs semiconductor layer for serving as a source/drain regions of at least one field-effect transistor (FET), an insulating layer selectively formed on at least one compound semiconductor layer; and first, second and third electrodes each having a first portion, formed on the GaAs semiconductor layer, and serving as one of gate/source/drain electrodes, respectively, of at least one FET, at least one of the first, second and third electrodes having a second portion formed on the insulating layer.

摘要翻译： 半导体器件包括硅衬底，至少一个化合物半导体层，形成在硅衬底上并且包括用作至少一个场效应晶体管（FET）的源极/漏极区的GaAs半导体层，选择性地形成绝缘层 在至少一个化合物半导体层上; 以及分别形成在所述GaAs半导体层上并分别用作至少一个FET的栅极/源极/漏极电极之一的第一，第二和第三电极，所述第一部分形成在所述GaAs半导体层上，所述第一，第二和第三电极中的至少一个 具有形成在绝缘层上的第二部分的电极。