PLASMA PROCESSING APPARATUS AND METHOD
    11.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
    等离子体加工设备和方法

    公开(公告)号:US20090275209A1

    公开(公告)日:2009-11-05

    申请号:US12139902

    申请日:2008-06-16

    IPC分类号: H01L21/46 C23C16/511

    摘要: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

    摘要翻译: 公开了一种等离子体处理装置和等离子体处理方法,通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。 具体地,当在反应容器中处理基板时,反应容器内部的气体压力增加。 或者,等离子体处理部分和基板之间的距离增大,或者基板在时间上移动到反应容器的外部。 作为另一替代方案,快门设置在等离子体产生区域和基板之间。 利用该程序,从等离子体生产开始的预定时间段,可以基本上截断等离子体在基板上的离子的入射。

    ELECTRON SOURCE AND IMAGE DISPLAY APPARATUS
    12.
    发明申请
    ELECTRON SOURCE AND IMAGE DISPLAY APPARATUS 失效
    电子源和图像显示设备

    公开(公告)号:US20090273270A1

    公开(公告)日:2009-11-05

    申请号:US12421365

    申请日:2009-04-09

    申请人: Nobumasa Suzuki

    发明人: Nobumasa Suzuki

    IPC分类号: H01J29/50

    CPC分类号: H01J29/04 H01J31/127

    摘要: An electron source including: a plurality of electron-emitting devices connected to a matrix wiring of scan lines and modulation lines on a substrate, wherein each of the electron-emitting devices includes a cathode electrode connected to the scan line, a gate electrode connected to the modulation line and a plurality of electron-emitting members, the cathode electrode is configured in a first comb-like structure for applying an electric potential of the cathode to the plurality of electron-emitting members, the gate electrode is configured in a second comb-like structure for applying an electric potential of the gate to the plurality of electron-emitting members, and each of the first and second comb-like structures is provided with a plurality of comb-teeth, and a connecting electrode electrically connected to the plurality of teeth in at least one of the first and second comb-like structures.

    摘要翻译: 一种电子源,包括:连接到基板上的扫描线和调制线的矩阵布线的多个电子发射器件,其中每个电子发射器件包括连接到扫描线的阴极电极,连接到 所述调制线和多个电子发射部件,所述阴极电极被构造成用于向所述多个电子发射部件施加所述阴极的电势的第一梳状结构,所述栅电极被配置在第二梳 用于向多个电子发射部件施加栅极的电位,并且第一和第二梳状结构中的每一个设置有多个梳齿,并且连接电极与多个电子发射部件电连接 在第一和第二梳状结构中的至少一个中的齿。

    Plasma processing apparatus and method
    13.
    发明申请
    Plasma processing apparatus and method 审中-公开
    等离子体处理装置及方法

    公开(公告)号:US20060021700A1

    公开(公告)日:2006-02-02

    申请号:US11190794

    申请日:2005-07-27

    IPC分类号: C23F1/00

    摘要: Disclosed is a plasma processing apparatus and a plasma processing method, by which ions of plasma can be injected uniformly over the whole surface of a substrate to be processed, in a short time. Specifically, when the substrate is processed in a reaction container, the gas pressure inside the reaction container is increased. Alternatively, the distance between a plasma processing portion and the substrate is enlarged, or the substrate is temporally moved outwardly of the reaction container. As a further alternative, a shutter is disposed between the plasma producing zone and the substrate. With this procedure, incidence of ions of the plasma upon the substrate can be substantially intercepted for a predetermined time period from the start of plasma production.

    摘要翻译: 公开了一种等离子体处理装置和等离子体处理方法,通过该等离子体处理装置和等离子体处理方法能够在短时间内均匀地注入待处理基板的整个表面。 具体地,当在反应容器中处理基板时,反应容器内部的气体压力增加。 或者,等离子体处理部分和基板之间的距离增大,或者基板在时间上移动到反应容器的外部。 作为另一替代方案,快门设置在等离子体产生区域和基板之间。 利用该程序,从等离子体生产开始的预定时间段,可以基本上截断等离子体在基板上的离子的入射。

    Microwave applicator, plasma processing apparatus having same, and plasma processing method
    14.
    发明授权
    Microwave applicator, plasma processing apparatus having same, and plasma processing method 失效
    微波施加器,等离子体处理装置及其等离子体处理方法

    公开(公告)号:US06870123B2

    公开(公告)日:2005-03-22

    申请号:US09816359

    申请日:2001-03-26

    摘要: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.

    摘要翻译: 为了更准确地控制微波的辐射特性以提高制品在径向和圆周方向上的加工的可控制性,公开了一种使用施加器的微波施加器和等离子体处理装置,该装置包括具有提供的表面的圆形波导 具有用于辐射微波的多个槽,其中多个槽的中心相对于圆形波导的中心在平行于表面的方向上偏移。

    Laser oscillating apparatus, exposure apparatus using the same and device fabrication method
    15.
    发明授权
    Laser oscillating apparatus, exposure apparatus using the same and device fabrication method 有权
    激光振荡装置,使用其的曝光装置和装置制造方法

    公开(公告)号:US06829279B1

    公开(公告)日:2004-12-07

    申请号:US09494945

    申请日:2000-02-01

    IPC分类号: H01S500

    摘要: In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

    摘要翻译: 在激光振荡装置中,通过将形成在波导壁上的多个槽引入来自波导的电磁波向激光管激励激光器中的激光气体,通过使从激光气体发出的光共振而产生激光束 槽形成为一条直线,使得它们的纵向与波导的纵向方向一致,并且金属壁形成为围绕这些槽。 该金属壁形成从激光管壁中的狭缝到窗口的微波通道的间隙,从而将激光管壁与狭缝分开预定距离。

    Apparatus for forming deposited film including light transmissive
diffusion plate
    20.
    发明授权
    Apparatus for forming deposited film including light transmissive diffusion plate 失效
    用于形成包括透光扩散板的沉积膜的装置

    公开(公告)号:US5433787A

    公开(公告)日:1995-07-18

    申请号:US987786

    申请日:1992-12-09

    摘要: A deposited film-forming apparatus comprises a reaction chamber, a supporting member provided in the reaction chamber for holding a substrate, a plasma generating chamber adjacent to the reaction chamber with interposition of a light-transmissive perforated diffusion plate wherein at least a part of the plasma generating chamber is made of a light-transmissive member, a plasma-generation means for generating plasma in the plasma generating chamber, a first gas-introduction means for introducing a gas into the reaction chamber, a second gas-introduction means for introducing another gas into the plasma generating chamber, an evacuation means for evacuating the reaction chamber and the plasma generating chamber, and a light source provided outside the plasma generating chamber for irradiating light to the substrate held on the supporting member through the plasma generating chamber and the perforated diffusion plate, wherein the perforated diffusion plate has a light-scattering diffusion face at least at the side of the reaction chamber.

    摘要翻译: 沉积膜形成装置包括反应室,设置在用于保持基板的反应室中的支撑构件,邻近反应室的等离子体产生室,插入透光多孔扩散板,其中至少部分 等离子体发生室由透光构件制成,等离子体产生装置,用于在等离子体发生室中产生等离子体;第一气体引入装置,用于将气体引入反应室;第二气体引入装置,用于引入另一个 气体进入等离子体发生室,用于抽空反应室和等离子体产生室的抽空装置,以及设置在等离子体发生室外部的光源,用于通过等离子体产生室向被保持在支撑构件上的基板照射光,并且穿孔 扩散板,其中所述多孔扩散板具有光散射扩散 至少在反应室侧面。