摘要:
A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.
摘要:
Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.
摘要:
A NOx gas detecting apparatus including an oxygen pumping cell for removing oxygen from a measurement gas, and a NOx detecting cell positioned downstream from the oxygen pumping cell to detect concentration of NOx in the measurement gas, the NOx detecting cell being configured to measure current which flows when oxygen generated from reducing NOx is pumped, wherein the NOx detecting cell has a NOx detecting cathode made of an electrode material including at least one alloy selected from the group consisting of a Pt-Pd alloy, a Pt-Au-Pd alloy, and a Pt-Pd-Rh alloy.
摘要:
In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950° C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.
摘要:
This invention provides an apparatus for separating condensable gas, which is provided with, as a membrane for separating condensable gas, an inorganic porous membrane which has a layer having a multiplicity of micropores communicating in the thickness direction of the membrane and having a pore radius, as determined by the nitrogen absorption method, of up to 50 .ANG., and preferably up to 20 .ANG., and which has an affinity for said condensable gas or is hydrophilic. This apparatus yields highly selective permeation of condensable gas, such as water vapor or organic gases.
摘要:
Method and apparatus for determination of the concentration of a component in a solution, such as ethyl alcohol in gasohol, acetic acid in hexane-acetic acid solution, or the like. Such determination is made with ease and accuracy based on a rate of pressure change caused in a closed container due to mass transfer occurring between two liquids through porous material.