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53 条记录 (耗时 0.042 秒)

    Indirectly heated button cathode for an ion source
    12.
    发明授权
    Indirectly heated button cathode for an ion source 有权
    用于离子源的间接加热按钮阴极

    公开(公告)号：US06878946B2

    公开(公告)日：2005-04-12

    申请号：US10259827

    申请日：2002-09-30

    申请人： Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

    发明人： Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

    IPC分类号： H01J27/00 ,  H01J37/08

    CPC分类号： H01J37/08 ,  H01J1/20 ,  H01J1/26 ,  H01J27/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

    摘要： An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.

    摘要翻译： 用于离子注入机的离子源的间接加热纽扣阴极具有由安装在轴环件中的塞片形成的纽扣件。 芯块与套环件绝热，使其能够在更高的温度下工作，从而使电子发射增强并集中在芯块的表面上。 lug lug piece piece piece。。。。。。。。。。 替代地，块塞可以是钽以提供较低的热离子功能。 在离子源中产生的浓缩等离子体有效地增强高电荷状态离子的产生，特别是用于高能量注入的后续加速的P +++。

    Vacuum bearing structure and a method of supporting a movable member
    13.
    发明授权
    Vacuum bearing structure and a method of supporting a movable member 失效
    真空轴承结构和支撑活动件的方法

    公开(公告)号：US06515288B1

    公开(公告)日：2003-02-04

    申请号：US09527029

    申请日：2000-03-16

    申请人： Geoffrey Ryding ,  Theodore H. Smick ,  Marvin Farley ,  Takao Sakase

    发明人： Geoffrey Ryding ,  Theodore H. Smick ,  Marvin Farley ,  Takao Sakase

    IPC分类号： G01F2300

    CPC分类号： F16C29/025 ,  F16C32/0603 ,  F16C32/0618 ,  F16C33/748 ,  F16C2300/62 ,  H01J37/18 ,  H01J2237/166 ,  H01J2237/2006 ,  H01J2237/31701

    摘要： A vacuum bearing structure comprises a combination of a planar gas bearing with a differentially-pumped vacuum seal. The bearing surface and the vacuum seal surfaces are formed of a porous material divided into a first outer region through which bearing gas can percolate to provide support and an inner second region providing the vacuum seal. An exhaust groove separates the two regions so that bearing gas can flow to atmosphere. The resulting structure can operate at a lower fly height to reduce loading on the differentially-pumped vacuum seal. The structure is particularly useful for motion feedthroughs into vacuum processes such as ion implantation.

    摘要翻译： 真空承载结构包括平面气体轴承与差动抽真空密封件的组合。 轴承表面和真空密封表面由被分成第一外部区域的多孔材料形成，轴承气体可以通过该第一外部区域渗透以提供支撑，以及提供真空密封的内部第二区域。 排气槽分离两个区域，使得轴承气体可以流到大气中。 所得到的结构可以在较低的飞行高度下操作以减少差动泵真空密封件上的负载。 该结构对于诸如离子注入的真空过程中的运动馈通特别有用。

    Movable ion source assembly
    15.
    发明授权
    Movable ion source assembly 失效
    可移动离子源组件

    公开(公告)号：US06331713B1

    公开(公告)日：2001-12-18

    申请号：US09413035

    申请日：1999-10-06

    申请人： Theodore H. Smick ,  Marvin Farley ,  Geoffrey Ryding ,  Shu Satoh ,  Peter Rose

    发明人： Theodore H. Smick ,  Marvin Farley ,  Geoffrey Ryding ,  Shu Satoh ,  Peter Rose

    IPC分类号： G21F502

    CPC分类号： H01J37/3171 ,  H01J27/08 ,  H01J37/08

    摘要： An ion source assembly 10 is disclosed, the assembly comprising a source sub assembly having an ion source 20, an extraction electrode 40 and an electrically insulating high voltage bushing 60 to support the extraction electrode 40 relative to the ion source 20. The ion source assembly further includes a chamber 70 having an exit aperture to allow egress of ions to an ion implanter. The chamber 70 encloses one or more further electrodes 80,90. The source sub assembly is mounted to the chamber 70 via a hinge 150. This allows ready access to the inner walls of the chamber 70, which in turn allows easier maintenance and cleaning of the further electrodes 80,90 as well as the inner walls of the chamber 70. Preferably, a liner 160 is employed on the inner walls of the chamber 70.

    摘要翻译： 公开了一种离子源组件10，该组件包括源子组件，其具有离子源20，提取电极40和电绝缘高压衬套60，以相对于离子源20支撑引出电极40.离子源组件 还包括具有出口孔的室70，以允许离子离开离子注入机。 腔室70包围一个或多个另外的电极80,90。 源子组件通过铰链150安装到腔室70.这允许容易地进入腔室70的内壁，这反过来允许更多的维护和清洁另外的电极80,90以及内壁 腔室70优选地，在腔室70的内壁上使用衬套160。

    Method of scanning a substrate in an ion implanter
    17.
    发明申请
    Method of scanning a substrate in an ion implanter 有权
    在离子注入机中扫描基板的方法

    公开(公告)号：US20080169434A1

    公开(公告)日：2008-07-17

    申请号：US11652645

    申请日：2007-01-12

    申请人： Geoffrey Ryding ,  Takao Sakase ,  Marvin Farley ,  Theodore H. Smick

    发明人： Geoffrey Ryding ,  Takao Sakase ,  Marvin Farley ,  Theodore H. Smick

    IPC分类号： G21K5/10

    CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J2237/20214 ,  H01J2237/30483

    摘要： This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.

    摘要翻译： 本发明涉及一种通过离子注入机中的离子束扫描基底以提供基底的均匀计量的方法。 该方法包括引起衬底和离子束之间的相对运动，使得离子束通过所有衬底并且基本上围绕其中心旋转衬底，同时引起相对运动。 旋转衬底同时导致衬底和离子束之间的相对运动具有几个优点，包括避免有问题的角度影响，增加均匀性，增加生产量并允许允许更大范围的离子束分布。

    SIMOX using controlled water vapor for oxygen implants
    20.
    发明授权
    SIMOX using controlled water vapor for oxygen implants 失效
    SIMOX使用受控的水蒸汽进行氧气植入

    公开(公告)号：US06989315B2

    公开(公告)日：2006-01-24

    申请号：US09884451

    申请日：2001-06-19

    申请人： Robert Dolan ,  Bernhard Cordts ,  Marvin Farley ,  Geoffrey Ryding

    发明人： Robert Dolan ,  Bernhard Cordts ,  Marvin Farley ,  Geoffrey Ryding

    IPC分类号： H01L21/76

    CPC分类号： H01J37/3171

    摘要： An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

    摘要翻译： 用于生产具有相对低的缺陷密度（例如低于约1×10 6 / cm 2）的硅晶片的离子注入系统包括离子注入室中的流体端口，用于引入 背景气体在离子注入过程中进入腔室。 引入的气体，例如水蒸气，降低了与掩埋二氧化硅层分离的顶部硅层的缺陷密度。