公开(公告)号：US20050116290A1

公开(公告)日：2005-06-02

申请号：US10725850

申请日：2003-12-02

申请人： Joel de Souza ,  John Ott ,  Alexander Reznicek ,  Katherine Saenger

发明人： Joel de Souza ,  John Ott ,  Alexander Reznicek ,  Katherine Saenger

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/04 ,  H01L29/10 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L21/02667 ,  H01L21/02609 ,  H01L21/2022 ,  H01L21/76251 ,  H01L21/76275 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78696

摘要： A method utilizing localized amorphization and recrystallization of stacked template layers is provided for making a planar substrate having semiconductor layers of different crystallographic orientations. Also provided are hybrid-orientation semiconductor substrate structures built with the methods of the invention, as well as such structures integrated with various CMOS circuits comprising at least two semiconductor devices disposed on different surface orientations for enhanced device performance.

摘要翻译： 提供了利用层叠模板层的局部非晶化和重结晶的方法，用于制造具有不同晶体取向的半导体层的平面基板。 还提供了利用本发明的方法构建的混合取向半导体衬底结构，以及与各种CMOS电路集成的这种结构，其包括设置在不同表面取向上的至少两个半导体器件，用于增强器件性能。