-
11.
公开(公告)号:US20200073244A1
公开(公告)日:2020-03-05
申请号:US16560776
申请日:2019-09-04
Applicant: Tokyo Electron Limited
Inventor: Hoyoung Kang , Anton J. Devilliers , Corey Lemley
Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes forming a first material in a first annular region of the front side surface, resulting in the first annular being coated with the first material. The first annular region is immediately adjacent to a perimeter of the substrate. The first annular region has a first outer perimeter proximate to the perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate. The method also includes forming a second material in an interior region of the front side surface, the second material coating the front side surface without adhering to the annular region.
-
公开(公告)号:US20180333680A1
公开(公告)日:2018-11-22
申请号:US15661551
申请日:2017-07-27
Applicant: Tokyo Electron Limited
Inventor: Hoyoung Kang , Anton deVilliers , Corey Lemley
CPC classification number: B01D65/02 , B01D29/012 , B01D29/111 , B01D63/06 , B01D63/14 , B01D71/36 , B01D71/56 , B01D2321/18
Abstract: A process is disclosed for wetting a filter cartridge used to treat a liquid solvent used in semiconductor manufacture. In the process, a filter cartridge having void spaces wherein the void spaces contain residual gas from the manufacturing process used to make the filter cartridge is connected to a source of purging gas. The purging gas is flowed through the filter cartridge to at least partially displace at least a portion of the residual gas from the manufacturing process used to make the filter cartridge. Next, liquid solvent is pumped through the filter cartridge so that the purging gas dissolves into the liquid solvent and to at least partially fill the void spaces to thereby at least partially wet out the filter cartridge with the liquid solvent.
-