公开(公告)号：US07429894B2

公开(公告)日：2008-09-30

申请号：US11519668

申请日：2006-09-12

申请人： Woo Jin Chang ,  Jae Kyoung Mun ,  Haecheon Kim ,  Jong Won Lim ,  Hong Gu Ji ,  Ho Kyun Ahn

发明人： Woo Jin Chang ,  Jae Kyoung Mun ,  Haecheon Kim ,  Jong Won Lim ,  Hong Gu Ji ,  Ho Kyun Ahn

IPC分类号： H03F3/68

CPC分类号： H03F3/602 ,  H03F3/211 ,  H03F2200/366 ,  H03F2200/447 ,  H03F2200/543 ,  H03F2203/21178

摘要： Provided is a power device having a connection structure compensating for a reactance component, in which transistors are arranged and connected to minimize deterioration of transistor properties caused by heat by compensating for a reactance component causing a phase difference due to transmission lines used for connecting a plurality of transistors in parallel such that the power device to be used for a high-frequency power amplifier outputs high power, and transmitting heat generated by high output power to a heat sink to be dissipated.

摘要翻译： 提供了具有补偿电抗分量的连接结构的功率器件，其中配置并连接晶体管，以通过补偿导致由于用于连接多个元件的传输线引起的相位差的电抗分量来最小化由热引起的晶体管性质的劣化 的晶体管并联，使得用于高频功率放大器的功率器件输出高功率，并将由高输出功率产生的热量传输到散热器。

公开(公告)号：US20090146724A1

公开(公告)日：2009-06-11

申请号：US12139046

申请日：2008-06-13

申请人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

发明人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

IPC分类号： H03K17/06

CPC分类号： H03K17/063 ,  H01P1/15 ,  H03K17/693 ,  H03K2017/066

摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.

摘要翻译： 提供了一种用于毫米波段控制电路的开关电路。 毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔 输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。 因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本 制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

公开(公告)号：US07671697B2

公开(公告)日：2010-03-02

申请号：US11928410

申请日：2007-10-30

申请人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

发明人： Jae Kyoung Mun ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

IPC分类号： H01P1/10 ,  H01L29/80

CPC分类号： H01P1/15

摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要设置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。

公开(公告)号：US20080129427A1

公开(公告)日：2008-06-05

申请号：US11928410

申请日：2007-10-30

申请人： Jae Kyoung MUN ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

发明人： Jae Kyoung MUN ,  Hae Cheon Kim ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hyun Kyu Yu

IPC分类号： H01P1/10

CPC分类号： H01P1/15

摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

摘要翻译： 提供了一种用于毫米波段控制电路的高隔离开关装置。 通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置 例如使用开关特性的移相器或数字衰减器。 另外，当开关微波单片集成电路（MMIC）被设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要配置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。 因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。 因此，可以降低制造成本。

公开(公告)号：US07889023B2

公开(公告)日：2011-02-15

申请号：US12139046

申请日：2008-06-13

申请人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

发明人： Jae Kyoung Mun ,  Dong Young Kim ,  Jong Won Lim ,  Ho Kyun Ahn ,  Hae Cheon Kim ,  Hyun Kyu Yu

IPC分类号： H01P1/10 ,  H01P3/08

CPC分类号： H03K17/063 ,  H01P1/15 ,  H03K17/693 ,  H03K2017/066

摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.

摘要翻译： 提供了一种用于毫米波段控制电路的开关电路。 毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔 输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。 因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本 制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

公开(公告)号：US06541319B2

公开(公告)日：2003-04-01

申请号：US10032754

申请日：2001-12-26

申请人： Jae Kyoung Mun ,  Hea Cheon Kim ,  Jong Won Lim

发明人： Jae Kyoung Mun ,  Hea Cheon Kim ,  Jong Won Lim

IPC分类号： H01L21338

CPC分类号： H01L29/66848

摘要： The present invention provides a self-aligned gate transistor. The present invention implants P-type impurity ions only below a channel region below a gate and below a source and drain electrode on semiconductor substrate having an ion implantation channel layer without implanting the P-type impurity ions into a narrow region between the source-gate and the gate-drain, deposits a gate metal and etches the gate pattern. In this case, the length (Lg) of the gate is defined to be narrower than the length (Lch-g) into which P-type impurity ions are implanted below the channel layer, thus improving a pinch-off characteristic. A method of manufacturing a field effect transistor having a self aligned gate according to the present invention comprises the steps of implanting P-type impurity ions only below a channel region below a gate and below a source and drain electrode; and depositing a refractory gate metal having a good high temperature stability to form a gate pattern using a dry etch method.

摘要翻译： 本发明提供一种自对准栅极晶体管。 本发明仅在栅极下方的沟道区域的下方并且在具有离子注入沟道层的半导体衬底上的源极和漏极电极下方注入P型杂质离子，而不将P型杂质离子注入到源极栅极之间的窄区域 并且栅极 - 漏极沉积栅极金属并蚀刻栅极图案。 在这种情况下，栅极的长度（Lg）被定义为比在沟道层下方注入P型杂质离子的长度（Lch-g）窄，从而提高夹断特性。 根据本发明的制造具有自对准栅极的场效应晶体管的方法包括以下步骤：将P型杂质离子注入仅在栅极下方的沟道区域的下方以及源极和漏极之下; 以及沉积具有良好的高温稳定性的难熔栅极金属，以使用干蚀刻法形成栅极图案。

公开(公告)号：US07679105B2

公开(公告)日：2010-03-16

申请号：US11634614

申请日：2006-12-06

申请人： Yong Won Kim ,  Eun Soo Nam ,  Ho Young Kim ,  Sang Seok Lee ,  Dong Suk Jun ,  Hong Yeol Lee ,  Seon Eui Hong ,  Dong Young Kim ,  Jong Won Lim ,  Myoung Sook Oh

发明人： Yong Won Kim ,  Eun Soo Nam ,  Ho Young Kim ,  Sang Seok Lee ,  Dong Suk Jun ,  Hong Yeol Lee ,  Seon Eui Hong ,  Dong Young Kim ,  Jong Won Lim ,  Myoung Sook Oh

IPC分类号： H01L29/24

CPC分类号： H01L29/7371 ,  H01L29/0817 ,  H01L29/41708 ,  H01L29/66318

摘要： Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.

摘要翻译： 提供了可以提高数据处理速度的异质结双极晶体管（HBT）和制造异质结双极晶体管的方法。 HBT包括半绝缘复合基板，形成在半绝缘复合基板上的副集电极层，在副集电极层的预定部分上彼此隔开预定距离设置的一对集电极， 集电极层和设置在集电极之间的基极层，在基极层的预定部分上彼此隔开预定距离设置的一对基底电极，设置在基极之间的发射极层叠层和发射极电极， 形成在发射极层堆叠上，并且包括具有比发射极层堆叠的线宽宽的线宽的部分，其中发射极电极的两个侧壁分别与一对基底电极的内壁对齐，并且侧壁 集电极层和基极层位于该对基极的一对基极的外侧壁之间。

公开(公告)号：US08053689B2

公开(公告)日：2011-11-08

申请号：US12409720

申请日：2009-03-24

申请人： Tae Hyun Kim ,  Kyung Soo Ji ,  Jong Won Lim

发明人： Tae Hyun Kim ,  Kyung Soo Ji ,  Jong Won Lim

IPC分类号： H01H13/70

CPC分类号： H04M1/23 ,  H01H2221/016 ,  H01H2221/044

摘要： A communication terminal including a housing having elastic key buttons integrally coupled thereto is provided. The housing is configured to define an external appearance of the communication terminal. Each of the key buttons may have one end thereof integrally coupled to the housing and a free end at an opposite end thereof. A plurality of key-input switches may be respectively positioned beneath each key button. Each of the key-input switches may detect a corresponding key-input when the free end of the key button is brought into contact with the key-input switch.

摘要翻译： 提供一种通信终端，其包括具有与其一体耦合的弹性键按钮的壳体。 壳体被配置为限定通信终端的外观。 每个按键可以将其一端整体地联接到外壳上，在其相对端具有自由端。 多个按键输入开关可以分别位于每个键按钮的下方。 当键按钮的自由端与键输入开关接触时，每个键输入开关可以检测相应的键输入。

公开(公告)号：US07970126B2

公开(公告)日：2011-06-28

申请号：US11546352

申请日：2006-10-12

申请人： Sang Moon Ahn ,  Jong Won Lim

发明人： Sang Moon Ahn ,  Jong Won Lim

IPC分类号： H04M9/00 ,  H04M1/00

CPC分类号： H04M1/0295 ,  H04M1/0214 ,  H04M1/0235

摘要： A communication terminal equipped with a sliding-type flat display module includes a main body and a flat display which slides between retracted and extended positions along a first axis relative to the main body and which rotates to a tilted position along a second axis when in the extended position. The first axis may be substantially perpendicular to the second axis. In the retracted position, the flat display is unable to rotate to the tilted position along the second axis. Also, in this position, the display is partially visible to allow information to be read by a user while at the same time being protected within a receiving part of the terminal.

摘要翻译： 具有滑动型平板显示模块的通信终端包括主体和平面显示器，其在相对于主体的第一轴线的缩回位置和延伸位置之间滑动，并且当在第二轴线处于第二轴线时旋转到倾斜位置 延长位置 第一轴线可以基本上垂直于第二轴线。 在缩回位置，平面显示器不能沿着第二轴线旋转到倾斜位置。 此外，在该位置，显示器是部分可见的，以允许用户读取信息，同时在终端的接收部分内被保护。

公开(公告)号：US20090242375A1

公开(公告)日：2009-10-01

申请号：US12409720

申请日：2009-03-24

申请人： Tae Hyun Kim ,  Kyung Soo Ji ,  Jong Won Lim

发明人： Tae Hyun Kim ,  Kyung Soo Ji ,  Jong Won Lim

IPC分类号： H01H13/76 ,  H01H13/70

CPC分类号： H04M1/23 ,  H01H2221/016 ,  H01H2221/044

摘要： A communication terminal including a housing having elastic key buttons integrally coupled thereto is provided. The housing is configured to define an external appearance of the communication terminal. Each of the key buttons may have one end thereof integrally coupled to the housing and a free end at an opposite end thereof. A plurality of key-input switches may be respectively positioned beneath each key button. Each of the key-input switches may detect a corresponding key-input when the free end of the key button is brought into contact with the key-input switch.

摘要翻译： 提供一种通信终端，其包括具有与其一体耦合的弹性键按钮的壳体。 壳体被配置为限定通信终端的外观。 每个按键可以将其一端整体地联接到外壳上，在其相对端具有自由端。 多个按键输入开关可以分别位于每个键按钮的下方。 当键按钮的自由端与键输入开关接触时，每个键输入开关可以检测相应的键输入。