公开(公告)号：US20080023084A1

公开(公告)日：2008-01-31

申请号：US11692567

申请日：2007-03-28

Applicant: Ping-Yi Chang ,  Xiao-Ping Zhang

Inventor： Ping-Yi Chang ,  Xiao-Ping Zhang

IPC: F17D1/00

CPC classification number: F17D1/086 ,  Y10T137/87185

Abstract: The present invention discloses a piping design for a high density plasma process chamber, wherein an extra pipe is added to between a process chamber and a mass flow controller, and the extra pipe together with a pump is used to drain out the gas, which cannot be monitored by the mass flow controller and survives in a gas injection pipe, lest the remaining gas pollute the deposited film or react with the process gas to induce an explosion in the succeeding deposition process.

Abstract translation: 本发明公开了一种用于高密度等离子体处理室的管道设计，其中在处理室和质量流量控制器之间添加额外的管道，并且使用额外的管道与泵一起排出不能 由质量流量控制器监控并在气体注入管道中存活，以免残留的气体污染沉积的膜或与处理气体反应，以在随后的沉积过程中引起爆炸。