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11.
公开(公告)号:US20120208374A1
公开(公告)日:2012-08-16
申请号:US13455916
申请日:2012-04-25
申请人: Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人: Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号: H01L21/312
CPC分类号: H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.
摘要翻译: 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施方案中,提供了形成复合无定形碳层的方法。 该方法包括将基板定位在处理室中,将烃源气体引入处理室中,将稀释源气体引入处理室,将等离子体起始气体引入处理室,在处理室中产生等离子体, 在所述基板上形成无定形碳起始层,其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下,并且在所述无定形碳起始层上形成块状无定形碳层,其中, 用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1:6或更大。
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公开(公告)号:US20110159211A1
公开(公告)日:2011-06-30
申请号:US12974365
申请日:2010-12-21
申请人: Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
发明人: Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
CPC分类号: C23C16/04 , C23C14/04 , C23C14/042 , C23C16/042 , C23C16/4401 , C23C16/45589 , C23C16/4585 , C30B25/12 , H01J37/32642 , H01J37/32651 , H01J37/32715 , H01J37/3441 , H01L21/68721 , H01L21/68735
摘要: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
摘要翻译: 本发明的实施例设想一种阴影环,其在晶片的边缘上提供增加或减少的和更均匀的沉积。 通过从阴影环的顶部和/或底部表面去除材料,可以实现增加的边缘沉积和斜面覆盖。 在一个实施例中,通过在底表面上设置凹槽来减小底表面上的材料。 通过增加阴影环的材料量,降低了边缘沉积和斜面覆盖。 调整晶片边缘处沉积的另一种方法包括增加或减小阴影环的内径。 形成阴影环的材料也可以改变以改变晶片边缘处的沉积量。
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