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39 条记录 (耗时 0.03 秒)

    Calibrated methods of forming hemispherical grained silicon layers
    11.
    发明授权
    Calibrated methods of forming hemispherical grained silicon layers 失效
    形成半球形硅层的校准方法

    公开(公告)号：US6117692A

    公开(公告)日：2000-09-12

    申请号：US7879

    申请日：1998-01-14

    申请人： Young-sun Kim ,  Young-wook Park

    发明人： Young-sun Kim ,  Young-wook Park

    IPC分类号： H01L21/02 ,  G01R31/26

    CPC分类号： H01L28/84

    摘要： A method of forming a silicon layer includes the step of calibrating the heater temperature so that a predetermined temperature is maintained when a microelectronic substrate is subsequently heated despite a number of processing runs previously performed. This calibrating step includes loading a test substrate into the reaction chamber, subjecting the test substrate to the predetermined reaction recipe wherein the test substrate is heated according to the predetermined recipe, measuring the temperature of the substrate, and removing the test substrate from the reaction chamber. The heater temperature is then adjusted according to the measured temperature of the test substrate. A microelectronic substrate is then loaded into the reaction chamber, and a hemispherical grained silicon seed layer is formed on the microelectronic substrate according to the predetermined recipe. The hemispherical grained silicon seed layer is annealed to form a hemispherical grained silicon layer according to the predetermined recipe.

    摘要翻译： 形成硅层的方法包括校准加热器温度的步骤，使得当微电子基板随后被加热而保持预定温度，而不管先前执行了多个处理运行。 该校准步骤包括将测试基板装载到反应室中，使测试基板经受预定的反应配方，其中根据预定配方加热测试基板，测量基板的温度，并将测试基板从反应室 。 然后根据测试基板的测量温度调节加热器温度。 然后将微电子衬底加载到反应室中，并根据预定的配方在微电子衬底上形成半球状晶粒硅籽晶层。 根据预定的配方，将半球形晶粒硅层退火以形成半球形的硅层。

    Method of making capacitor of highly integrated semiconductor device using multiple insulation layers
    12.
    发明授权
    Method of making capacitor of highly integrated semiconductor device using multiple insulation layers 失效
    使用多层绝缘层制造高度集成的半导体器件的电容器的方法

    公开(公告)号：US5721153A

    公开(公告)日：1998-02-24

    申请号：US604300

    申请日：1996-02-21

    申请人： Kyung-hoon Kim ,  Young-wook Park ,  Cha-young Yoo

    发明人： Kyung-hoon Kim ,  Young-wook Park ,  Cha-young Yoo

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  Y10S438/964

    摘要： A capacitor of a highly integrated semiconductor device and a manufacturing method thereof is provided. In the highly integrated semiconductor device, an HSG polysilicon layer pattern is formed having a multitude of hemispherical grains (HSG) on the top and side surfaces of the storage electrode. Thus, the etching of and damage to the HSG polysilicon layer pattern can be prevented, and capacitance can be increased by maximizing the surface area of the storage electrode.

    摘要翻译： 提供了高度集成的半导体器件的电容器及其制造方法。 在高度集成的半导体器件中，在存储电极的顶表面和侧表面上形成有多个半球形晶粒（HSG）的HSG多晶硅层图案。 因此，可以防止对HSG多晶硅层图案的蚀刻和损坏，并且可以通过使存储电极的表面积最大化来增加电容。

    Methods for forming capacitor structures including etching pits
    16.
    发明授权
    Methods for forming capacitor structures including etching pits 失效
    用于形成包括蚀刻坑的电容器结构的方法

    公开(公告)号：US06194263B1

    公开(公告)日：2001-02-27

    申请号：US08729232

    申请日：1996-10-09

    申请人： Young-sun Kim ,  Young-wook Park

    发明人： Young-sun Kim ,  Young-wook Park

    IPC分类号： H01L218242

    CPC分类号： H01L28/84 ,  H01L27/10852 ,  H01L28/90

    摘要： A method for forming an electrode structure includes the steps of forming a conductive electrode on the microelectronic substrate, forming HSG-silicon seeds on the surface of the conductive electrode, and etching the conductive electrode using the HSG-silicon seeds as a mask so that pits are formed between the HSG-silicon seeds. In addition, the HSG-silicon seeds on the conductive electrode can be grown to form enlarged HSG-silicon bumps on the conductive electrode further increasing the surface area thereof. Related structures are also discussed.

    摘要翻译： 一种形成电极结构的方法包括以下步骤：在微电子衬底上形成导电电极，在导电电极的表面上形成HSG-硅晶种，并使用HSG-硅晶种作为掩模蚀刻导电电极，使得凹坑 形成在HSG-硅种子之间。 此外，导电电极上的HSG-硅晶种可以生长以在导电电极上形成扩大的HSG-硅凸块，进一步增加其表面积。 还讨论了相关结构。

    Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers
    17.
    发明授权
    Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers 失效
    形成包括保护层的半球形硅（HSG-Si）电容器结构的方法

    公开(公告)号：US6004858A

    公开(公告)日：1999-12-21

    申请号：US988858

    申请日：1997-12-11

    申请人： Se-jin Shim ,  Young-sun Kim ,  Cha-young Yoo ,  Young-wook Park

    发明人： Se-jin Shim ,  Young-sun Kim ,  Cha-young Yoo ,  Young-wook Park

    IPC分类号： H01L21/02 ,  H01L21/20

    CPC分类号： H01L28/84

    摘要： A method of forming a capacitor structure includes the steps of forming a conductive layer on a microelectronic substrate, and forming a first hemispherical grained silicon layer on the conductive layer opposite the substrate. A protective layer is formed on the hemispherical grained silicon layer. The protective layer, the first hemispherical grained silicon layer, and the conductive layer are then patterned so that portions of the microelectronic substrate are exposed adjacent the patterned conductive layer. A second hemispherical grained silicon layer is formed on the surface of the protective layer opposite the first hemispherical grained silicon layer, on sidewalls of the patterned conductive layer, and on the exposed portions of the microelectronic substrate. Portions of the second hemispherical grained silicon layer are removed from the exposed portions of the microelectronic substrate, and the patterned protective layer is then removed.

    摘要翻译： 一种形成电容器结构的方法包括以下步骤：在微电子衬底上形成导电层，并在与衬底相对的导电层上形成第一半球晶粒硅层。 在半球状粒状硅层上形成保护层。 然后对保护层，第一半球形晶粒硅层和导电层进行构图，使得微电子衬底的部分暴露在图案化导电层附近。 在保护层的与第一半球状粒状硅层相对的表面上，在图案化的导电层的侧壁上，以及微电子衬底的露出部分上形成第二半球状粒状硅层。 从微电子衬底的暴露部分去除第二半球形硅层的一部分，然后去除图案化的保护层。

    Method for forming a thin film
    18.
    发明授权
    Method for forming a thin film 失效

    公开(公告)号：US07481882B2

    公开(公告)日：2009-01-27

    申请号：US10131761

    申请日：2002-04-23

    申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

    IPC分类号： H01L21/285 ,  H01L27/10

    CPC分类号： C23C16/56 ,  C23C16/405

    摘要： A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.

    Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
    20.
    发明授权
    Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere 有权
    在氢气氛下对电介质膜进行热处理的半导体器件的电容器的制造方法

    公开(公告)号：US6136641A

    公开(公告)日：2000-10-24

    申请号：US134063

    申请日：1998-08-13

    申请人： Seok-jun Won ,  Kab-jin Nam ,  Young-wook Park

    发明人： Seok-jun Won ,  Kab-jin Nam ,  Young-wook Park

    IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/70

    CPC分类号： H01L28/55 ,  H01L21/3105 ,  H01L21/31691

    摘要： A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600.degree. C. using H.sub.2 gas or H.sub.2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.

    摘要翻译： 一种用于半导体器件的电容器制造方法，其中在氢气氛下对电介质膜进行热处理以改善介电膜和电极之间的界面特性。 在该方法中，在半导体衬底上形成下电极。 在下电极上形成电介质膜。 电介质膜在氢气氛下进行热处理。 在电介质膜上形成上电极，从而形成电容器。 氢气氛下的热处理在300〜600℃的温度下，使用H2气或H2等离子体进行5〜60分钟。 因此，电容器的电极和电介质膜之间的界面陷阱的密度降低。