公开(公告)号：US20050104985A1

公开(公告)日：2005-05-19

申请号：US10508234

申请日：2003-03-20

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi

IPC分类号： H04N5/335 ,  H04N5/345 ,  H04N5/353 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374 ,  H04N5/376 ,  H04N3/14

CPC分类号： H04N5/3532 ,  H04N5/3456

摘要： A solid-state imaging device for preventing aging deterioration of image quality due to a thinning out reading mode in addition to a usual all pixel reading operation mode and maintaining a good image quality and a method for driving the same, including an imaging pixel portion 111 formed by arranging a plurality of pixels each including a photo-electric conversion element and a reading circuit of the photo-electric conversion element in a matrix, having an all pixel reading mode for reading pixel signals from all pixels of the imaging pixel portion 111 and a thinning out reading mode for intermittently selecting part of the pixels of the imaging pixel portion 111 for each pixel row or each pixel column or both of them to read out pixel signals, and having drive circuits 112 to 116 having a function of selecting the reading circuit of the imaging pixel portion 111 for each pixel row or each pixel column by a drive signal and receiving as input drive signals also with respect to the pixel rows or pixel columns thinned out at the time of driving by the thinning out reading mode to operate the reading circuit of each pixel.

摘要翻译： 一种固态成像装置，除了通常的全部像素读取操作模式以及保持良好的图像质量以及其驱动方法之外，还可以防止由于稀疏读取模式引起的图像质量的老化劣化，其包括成像像素部分111 通过以矩阵形式布置包括光电转换元件的光电转换元件和读取电路的多个像素，具有用于从成像像素部分111的所有像素读取像素信号的全像素读取模式和 用于间歇地选择每个像素行或每个像素列或两者的成像像素部分111的像素的一部分的稀疏读取模式以读出像素信号，并且具有选择读取功能的驱动电路112至116 通过驱动信号针对每个像素行或每个像素列的成像像素部分111的电路，并且还相对于像素接收作为输入驱动信号 通过稀疏读出模式在驱动时间薄化的EL行或像素列，以操作每个像素的读取电路。

公开(公告)号：USRE45891E1

公开(公告)日：2016-02-16

申请号：US13631397

申请日：2012-09-28

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Tetsuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Tetsuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L31/062 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US07804116B2

公开(公告)日：2010-09-28

申请号：US11981002

申请日：2007-10-30

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US07499091B2

公开(公告)日：2009-03-03

申请号：US10508234

申请日：2003-03-20

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3532 ,  H04N5/3456

摘要： A solid-state imaging device for preventing aging deterioration of image quality due to a thinning out reading mode in addition to a usual all pixel reading operation mode and maintaining a good image quality and a method for driving the same, including an imaging pixel portion 111 formed by arranging a plurality of pixels each including a photo-electric conversion element and a reading circuit of the photo-electric conversion element in a matrix, having an all pixel reading mode for reading pixel signals from all pixels of the imaging pixel portion 111 and a thinning out reading mode for intermittently selecting part of the pixels of the imaging pixel portion 111 for each pixel row or each pixel column or both of them to read out pixel signals, and having drive circuits 112 to 116 having a function of selecting the reading circuit of the imaging pixel portion 111 for each pixel row or each pixel column by a drive signal and receiving as input drive signals also with respect to the pixel rows or pixel columns thinned out at the time of driving by the thinning out reading mode to operate the reading circuit of each pixel.

摘要翻译： 一种固态成像装置，除了通常的全部像素读取操作模式以及保持良好的图像质量以及其驱动方法之外，还可以防止由于稀疏读取模式引起的图像质量的老化劣化，其包括成像像素部分111 通过以矩阵形式布置包括光电转换元件的光电转换元件和读取电路的多个像素，具有用于从成像像素部分111的所有像素读取像素信号的全像素读取模式和 用于间歇地选择每个像素行或每个像素列或两者的成像像素部分111的像素的一部分的稀疏读取模式以读出像素信号，并且具有选择读取功能的驱动电路112至116 通过驱动信号针对每个像素行或每个像素列的成像像素部分111的电路，并且还相对于像素接收作为输入驱动信号 通过稀疏读出模式在驱动时间薄化的EL行或像素列，以操作每个像素的读取电路。

公开(公告)号：US20080210947A1

公开(公告)日：2008-09-04

申请号：US11824088

申请日：2007-06-29

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US08552483B2

公开(公告)日：2013-10-08

申请号：US13541428

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/102 ,  H01L31/101 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US20120267692A1

公开(公告)日：2012-10-25

申请号：US13541455

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/148

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。 并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US20090227064A1

公开(公告)日：2009-09-10

申请号：US12468692

申请日：2009-05-19

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/0224 ,  H01L23/544 ,  H01L21/304

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见 从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

公开(公告)号：US08994083B2

公开(公告)日：2015-03-31

申请号：US13541447

申请日：2012-07-03

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L31/062 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

公开(公告)号：US07294873B2

公开(公告)日：2007-11-13

申请号：US10192409

申请日：2002-07-10

申请人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

发明人： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC分类号： H01L27/148

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

摘要翻译： 在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。 并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。 可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。