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190 条记录 (耗时 0.033 秒)

    Semiconductor device
    14.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07592980B2

    公开(公告)日：2009-09-22

    申请号：US10453940

    申请日：2003-06-04

    申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    IPC分类号： G09G3/30 ,  G09G3/10

    CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

    摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

    Light emitting apparatus and method of driving same
    18.
    发明申请
    Light emitting apparatus and method of driving same 有权
    发光装置及其驱动方法

    公开(公告)号：US20070268286A1

    公开(公告)日：2007-11-22

    申请号：US11880982

    申请日：2007-07-25

    申请人： Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki

    发明人： Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki

    IPC分类号： G06F3/038

    CPC分类号： G09G3/3266 ,  G09G3/2022 ,  G09G3/2033 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2300/0847 ,  G09G2310/06 ,  G09G2310/061 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244

    摘要： In a light emitting apparatus, all pixels are fabricated using monochrome light-emitting materials. Since the light transmittances of color filters or color conversion layers are not uniform among red (R), green (G), and blue (B), exact white color cannot be displayed. In the present invention, dots for producing these colors of light, i.e., red (R), green (G), and blue (B), are arranged parallel to writing scan lines and to erasing scan lines. The brightnesses are made uniform by controlling the emission times of the emitted colors of light. According to the brightnesses obtained after passage through the colored layer with the lowest light transmittance, the emission times of colors of light passed through the other colored layers are shortened. Thus, as the brightness differences after passage can be reduced, the light emitting apparatus can display exact white color.

    摘要翻译： 在发光装置中，使用单色发光材料制造所有像素。 由于在红色（R），绿色（G）和蓝色（B）中滤色器或颜色转换层的透光率不均匀，所以不能显示精确的白色。 在本发明中，用于产生这些颜色的光，即红色（R），绿色（G）和蓝色（B））的点平行于写入扫描线布置并擦除扫描线。 通过控制发出的光的发射时间来使亮度均匀。 根据通过具有最低透光率的着色层获得的亮度，通过其它着色层的光的颜色的发射次数缩短。 因此，随着通过后的亮度差可以减小，发光装置可以显示准确的白色。

    Light emitting device and drive method thereof
    19.
    发明授权
    Light emitting device and drive method thereof 有权
    发光装置及其驱动方法

    公开(公告)号：US07276856B2

    公开(公告)日：2007-10-02

    申请号：US11321992

    申请日：2005-12-29

    申请人： Aya Anzai ,  Mitsuaki Osame ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

    发明人： Aya Anzai ,  Mitsuaki Osame ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

    IPC分类号： G09G3/10

    CPC分类号： G09G3/3266 ,  G09G3/2022 ,  G09G3/3258 ,  G09G3/3291 ,  G09G3/3655 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0847 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/0262 ,  G09G2310/027 ,  G09G2310/0278 ,  G09G2320/043 ,  G09G2330/021 ,  H01L27/3244

    摘要： The reliability of an EL element is enhanced while the increase of the electric power consumption is suppressed. It becomes possible that in a SES drive, the reverse bias is applied to the EL element driven at a constant electric current. Moreover, the application of the reverse bias is performed by varying only the counter electrode, and thus withstand voltage of TFT and the increase of the electric power consumption due to the increase of voltage of the gate signal line drive circuit, which becomes a problem when changing greatly the electric current supplying line, can be suppressed. Furthermore, the reduction of the electric power consumption can also be achieved while the enhancement of the reliability is secured by making the reverse bias smaller than the forward bias. Moreover, the increase of the number of electric sources can be also suppressed by making the potential be in common with the potential of the electric source of the source signal line drive circuit or the gate signal line drive circuit, at the time when the reverse bias is applied.

    摘要翻译： 在抑制电力消耗的增加的同时，增强了EL元件的可靠性。 可能的是，在SES驱动中，反向偏压被施加到以恒定电流驱动的EL元件。 此外，通过仅改变对置电极，因此耐受TFT的电压和由于栅极信号线驱动电路的电压的增加而导致的电力消耗的增加来执行反向偏置的应用，这成为问题 可以大大改变电流供应线路，可以抑制。 此外，还可以通过使反向偏压小于正向偏压来确保提高可靠性，同时可以实现功耗的降低。 此外，通过使电位与源极信号线驱动电路或栅极信号线驱动电路的电位的电位相同，也可以抑制电源数量的增加，反向偏置 被申请;被应用。

    Semiconductor device
    20.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070176176A1

    公开(公告)日：2007-08-02

    申请号：US10453940

    申请日：2003-06-04

    申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Ryota Fukumoto

    IPC分类号： H01L29/04

    CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

    摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

    摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。