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公开(公告)号：US06582858B2
公开(公告)日：2003-06-24
申请号：US09682480
申请日：2001-09-07
IPC分类号： G03F900
摘要： The present invention provides An alternating phase shifting mask (Alt-PSM), that is to be used in a double exposure lithographic process with a light source of 248 nm. The Alt-PSM comprises: (1) a quartz substrate; (2) at least one semi-dense line on the substrate, wherein the semi-dense line is adjacent to a clear region with a width larger than 2 nm on one side and on the other side is adjacent to a dense-line pattern with a narrow pitch; (3) a first phase shifting region, which is located between the dense line pattern and the semi-dense line pattern and is adjacent to the semi-dense line; and (4) a second phase shifting region with a predetermined width, which is adjacent to the semi-dense line and located on the side opposite to the first phase shifting region; wherein the phase difference between the first phase shifting region and the second phase shifting region is 180 degree.
摘要翻译： 本发明提供一种用于248nm光源的双曝光光刻工艺中的交替相移掩模（Alt-PSM）。 Alt-PSM包括：（1）石英基片; （2）衬底上的至少一条半致密线，其中半致密线与一侧的宽度大于2nm的透明区域相邻，另一侧与密集线图案相邻， 狭窄的音调 （3）第一相移区域，位于密集线图案和半致密线图案之间并且与半密集线相邻; 和（4）具有预定宽度的第二相移区域，其与半密度线相邻并且位于与第一相移区域相对的一侧上; 其中所述第一相移区域和所述第二相移区域之间的相位差为180度。
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公开(公告)号：US06617081B2
公开(公告)日：2003-09-09
申请号：US09813048
申请日：2001-03-20
申请人： Chih-Yung Lin , Chien-Wen Lai
发明人： Chih-Yung Lin , Chien-Wen Lai
IPC分类号： G03F900
摘要： In accordance with the present invention, a method is provided for improving process window in semi-dense area by using a phase shifter. This method comprises a step of providing a transparent substrate. Then, at least two opaque regions are formed on the substrate. A phase shifter is formed in the substrate, wherein the phase shifter is formed in-between adjacent opaque regions. As a result, the phase shifter shifts the incident beam at an angle that reduces the proximity effect and improves the optical contrast and the depth of focus (DOF) to get wider process window.
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