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    Vapor deposition reactor
    11.
    发明授权
    Vapor deposition reactor 失效
    蒸气沉积反应器

    公开(公告)号：US3750620A

    公开(公告)日：1973-08-07

    申请号：US3750620D

    申请日：1971-03-04

    申请人： PHILIPS CORP

    发明人： EVERSTEIJN F ,  PEEK H

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C23C13/10

    CPC分类号： C23C16/45585 ,  C30B25/14

    摘要： The invention relates to a reactor in which during operation a susceptor is heated and indirectly also a substrate, for example, of semiconductor material arranged on the susceptor. The heated substrate reacts with a gas stream so that the substrate may be etched or oxidized. As an alternative material may be deposited on the substrate from the gas stream. It is a drawback that, viewed in the direction of the gas stream, the rate of performance of these processes decreases. An appreciable improvement is obtained by using a reactor tube having a section which tapers in the direction of the gas stream.

    摘要翻译： 本发明涉及一种反应器，其中在操作期间，感受体被加热并且间接地还包括布置在基座上的例如半导体材料的衬底。 加热的衬底与气流反应，使得衬底可被蚀刻或氧化。 由于替代材料可以从气流中沉积在衬底上。

    Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
    13.
    发明授权
    Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area 有权
    用于大面积半导体晶片的半导体处理室的喷头冷却器系统

    公开(公告)号：US09484190B2

    公开(公告)日：2016-11-01

    申请号：US14164182

    申请日：2014-01-25

    申请人： Yuri Glukhoy

    发明人： Yuri Glukhoy

    IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/455 ,  C23C16/44

    CPC分类号： H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45585 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32477

    摘要： Proposed is a showerhead-cooler system of a semiconductor-processing chamber with uniform distribution of plasma density. The showerhead has a plurality of through gas holes that are coaxial with respective channels of the gas-feeding cooler plate. On the gas inlet side, the though passages of the showerhead are provided with unequal conical nozzles characterized by a central angle that decreases from the peripheral part of the showerhead to the showerhead center. Such design provides uniformity of plasma density. Furthermore, in order to protect the walls of the nozzle and the walls of the gas holes from erosion that may be caused by the hollow-cathode phenomenon, these areas are coated with a thin protective coating that is resistant to electrical breakdown and chemical corrosion.

    摘要翻译： 提出了具有均匀分布的等离子体密度的半导体处理室的喷头冷却器系统。 喷头具有与供气冷却器板的相应通道同轴的多个通气孔。 在气体入口侧，喷头的通道设置有不等的锥形喷嘴，其特征在于从喷头的周边部分到喷头中心减小的中心角。 这种设计提供等离子体密度的均匀性。 此外，为了保护喷嘴的壁和气孔的壁免受可能由中空阴极现象引起的侵蚀，这些区域涂覆有耐电击穿和化学腐蚀的薄保护涂层。

    METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT
    16.
    发明申请
    METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT 有权
    金属有机化学蒸气沉积设备

    公开(公告)号：US20120118234A1

    公开(公告)日：2012-05-17

    申请号：US13360366

    申请日：2012-01-27

    申请人： Masaki UENO ,  Toshio UEDA ,  Eiryo TAKASUKA

    发明人： Masaki UENO ,  Toshio UEDA ,  Eiryo TAKASUKA

    IPC分类号： C23C16/46

    CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/165 ,  C30B35/00

    摘要： Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

    摘要翻译： 金属有机化学气相沉积设备是通过使用反应气体在衬底上形成膜的金属有机化学气相沉积设备，并且包括加热衬底并具有用于保持衬底的保持表面的基座，以及用于引入 反应气体到基底。 基座可旋转，保持面保持面向流动通道的内部，流动通道沿着反应气体的流动方向的高度从位置保持恒定，并且从位置单调减小 到下游。 从而可以提高成膜效率，同时允许成形膜具有均匀的厚度。

    METHOD FOR PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR
    17.
    发明申请
    METHOD FOR PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR 审中-公开
    生产III-V族化合物半导体的方法

    公开(公告)号：US20090320746A1

    公开(公告)日：2009-12-31

    申请号：US12524519

    申请日：2008-01-24

    申请人： Yoshihiko Tsuchida ,  Masahiko Hata

    发明人： Yoshihiko Tsuchida ,  Masahiko Hata

    IPC分类号： C30B25/02 ,  C23C16/54

    CPC分类号： C23C16/303 ,  C23C16/45585 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

    摘要： The present invention provides a method for producing a Group III-V compound semiconductor, comprising a step of feeding a Group III raw material, a Group V raw material, a carrier gas, and if necessary, other raw materials, to a reactor to grow a Group III-V compound semiconductor on a substrate in the reactor by a metalorganic vapor phase epitaxy, wherein the Group III raw material and the Group V raw material are independently fed to the reactor, and hydrogen halide is fed to the reactor together with a raw material other than the Group V raw material, or the carrier gas.

    摘要翻译： 本发明提供了一种III-V族化合物半导体的制造方法，其特征在于，包括将III族原料，V族原料，载气，必要时将其他原料进料到反应器中生长的工序 通过金属有机气相外延在反应器中的基板上的III-V族化合物半导体，其中第III族原料和第V族原料独立地进料到反应器中，并将卤化氢与 不属于V组原料的原料，或载气。

    Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
    18.
    发明申请
    Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution 审中-公开
    具有环形增压室的气体分配板，其具有用于均匀分布的倾斜天花板

    公开(公告)号：US20090159002A1

    公开(公告)日：2009-06-25

    申请号：US12004448

    申请日：2007-12-19

    申请人： Kallol Bera ,  Shahid Rauf

    发明人： Kallol Bera ,  Shahid Rauf

    IPC分类号： C23C16/44 ,  B05B1/18

    CPC分类号： C23C16/45585 ,  H01J37/3244

    摘要： A gas distribution plate for a plasma reactor has an annular gas distribution plenum with an array of gas injection holes and a gas injection port at one end of the annular plenum, the plenum being progressively constricted in cross-sectional area along its azimuthal path by a sloping ceiling.

    摘要翻译： 用于等离子体反应器的气体分配板具有环形气体分配气室，其具有气体注入孔阵列和在环形增压室的一端处的气体注入口，所述增压室沿着其方位角路径的横截面积逐渐收缩， 倾斜的天花板

    Metal organic chemical vapor deposition equipment
    19.
    发明申请
    Metal organic chemical vapor deposition equipment 审中-公开
    金属有机化学气相沉积设备

    公开(公告)号：US20080006208A1

    公开(公告)日：2008-01-10

    申请号：US11822188

    申请日：2007-07-03

    申请人： Masaki Ueno ,  Toshio Ueda ,  Eiryo Takasuka

    发明人： Masaki Ueno ,  Toshio Ueda ,  Eiryo Takasuka

    IPC分类号： C23C16/458

    CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/165 ,  C30B35/00

    摘要： Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

    摘要翻译： 金属有机化学气相沉积设备是通过使用反应气体在衬底上形成膜的金属有机化学气相沉积设备，并且包括加热衬底并具有用于保持衬底的保持表面的基座，以及用于引入 反应气体到基底。 基座可旋转，保持面保持面向流动通道的内部，流动通道沿着反应气体的流动方向的高度从位置保持恒定，并且从位置单调减小 到下游。 从而可以提高成膜效率，同时允许成形膜具有均匀的厚度。